Development of a 250 Degree C 15kV Supercascode Switch Using SiC JFET Technology

Sanabria, David E.; Appert, Randy; Pronko, Steven G. E.; Major, Joshua; DeVoto, Douglas; Heinselman, Karen; Lehr, Jane M.; Gonzalez, Nicolas; Ginley, David S.

doi:10.1109/WiPDA56483.2022.9955247

Development of a 250 Degree C 15kV Supercascode Switch Using SiC JFET Technology

Conference · 23 November 2022

DOI:https://doi.org/10.1109/WiPDA56483.2022.9955247· OSTI ID:1922193

Sanabria, David E.; Appert, Randy; Pronko, Steven G. E.; ; ; ; Lehr, Jane M.; Gonzalez, Nicolas;

Tetra Corporation is developing a pulsed power drilling system for the geothermal industry. The system requires a high temperature switching technology to replace the existing technology based on Si thyristors with a temperature limit of 150 degrees C. This work focuses on the development of such switch based on a Supercascode configuration using SiC JFET technology. The development presented contains thermal models, packaging design and processes, circuit simulations and prototypes of both the Supercascode switch and the high temperature packaged SiC JFETs.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1922193

Report Number(s):: NREL/CP-5F00-84068; MainId:84841; UUID:8af5178d-c527-4091-96fe-8d6ff45c7e78; MainAdminID:68563

Resource Relation:: Conference: Presented at the 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 7-9 November 2022, Redondo Beach, California

Country of Publication:: United States

Language:: English

References (8)

6.0kV, 100A, 175kHz super cascode power module for medium voltage, high power applications Gao, Bo; Morgan, Adam J.; Xu, Yang 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC.2018.8341182	conference	March 2018
A High-Voltage Cascaded Solid-State DC Circuit Breaker Using Normally-ON SiC JFETs Garcia Rodriguez, Luciano A.; Gill, Lee; Mueller, Jacob 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia) https://doi.org/10.1109/ECCE-Asia49820.2021.9479388	conference	May 2021
Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions Neudeck, Philip G.; Chen, Liangyu; Meredith, Roger D. IEEE Journal of the Electron Devices Society, Vol. 7 https://doi.org/10.1109/JEDS.2018.2882693	journal	January 2019
Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C Neudeck, Philip G.; Spry, David J.; Chen, Liangyu IEEE Electron Device Letters, Vol. 38, Issue 8 https://doi.org/10.1109/LED.2017.2719280	journal	August 2017
SiC Power Electronics Packaging Prognostics Bower, Gregory; Rogan, Chris; Kozlowski, James 2008 IEEE Aerospace Conference https://doi.org/10.1109/AERO.2008.4526605	conference	March 2008
Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs Deng, Erping; Zhao, Zhibin; Xin, Qingming Microelectronics Reliability, Vol. 78 https://doi.org/10.1016/j.microrel.2017.07.095	journal	November 2017
Integrated circuits in silicon carbide for high-temperature applications Zetterling, Carl-Mikael MRS Bulletin, Vol. 40, Issue 5 https://doi.org/10.1557/mrs.2015.90	journal	May 2015
Die-attachment technologies for high-temperature applications of Si and SiC-based power devices Bajwa, A. A.; Moller, E.; Wilde, J. 2015 IEEE 65th Electronic Components and Technology Conference (ECTC) https://doi.org/10.1109/ECTC.2015.7159903	conference	May 2015

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Related Subjects

ENGINEERING
GEOTHERMAL ENERGY
cascaded switch
JFET
packaging
SiC
supercascode

Development of a 250 Degree C 15kV Supercascode Switch Using SiC JFET Technology

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References (8)

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