Stability of Silicon Heterojunction Solar Cells Having Hydrogen Plasma Treated Intrinsic Layer

Soman, Anishkumar; Obikoya, Gbenga; Johnston, Steve; Harvey, Steven; Das, Ujjwal; Hegedus, Steven

doi:10.1109/PVSC48317.2022.9938700

Stability of Silicon Heterojunction Solar Cells Having Hydrogen Plasma Treated Intrinsic Layer

Conference · 14 November 2022

DOI:https://doi.org/10.1109/PVSC48317.2022.9938700· OSTI ID:1913964

Soman, Anishkumar; Obikoya, Gbenga; ; ; Das, Ujjwal; Hegedus, Steven

The open-circuit voltage of Silicon Heterojunction (HJ) cells can be improved by using extrinsic hydrogen plasma treatment (HPT) to reduce the trap states (NT) which we have verified using Deep Level Transient Spectroscopy (DLTS). However, hydrogen has been associated with long-term degradation. We have investigated the stability of HJ cells with and without HPT using accelerated degradation (1-sun illumination, 90 degrees C temperature, argon ambient for 1000 hours). The stability has been studied using DLTS, current-voltage, and Suns-Voc. Our results show HPT cells are stable and maintain their higher Voc and lower NT after accelerated degradation.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), Sunshot Program; University of Delaware Dissertation Fellowship

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1913964

Report Number(s):: NREL/CP-5K00-85067; MainId:85840; UUID:ff345d7d-b149-4f25-bf31-dfd4b9188f6e; MainAdminID:68512

Resource Relation:: Conference: Presented at the 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), 5-10 June 2022, Philadelphia, Pennsylvania

Country of Publication:: United States

Language:: English

References (13)

Analysis of silicon wafer surface preparation for heterojunction solar cells using X-ray photoelectron spectroscopy and effective minority carrier lifetime Nsofor, U. J.; Zhang, L.; Soman, A. Solar Energy Materials and Solar Cells, Vol. 183 https://doi.org/10.1016/j.solmat.2018.03.006	journal	August 2018
Experimental and simulated analysis of front versus all-back-contact silicon heterojunction solar cells: effect of interface and doped a-Si:H layer defects: Experimental and simulated analysis of front versus all-back-contact silicon heterojunction solar cells Shu, Zhan; Das, Ujjwal; Allen, John Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 1 https://doi.org/10.1002/pip.2400	journal	June 2013
Correlation between in Situ Diagnostics of the Hydrogen Plasma and the Interface Passivation Quality of Hydrogen Plasma Post-Treated a-Si:H in Silicon Heterojunction Solar Cells Soman, Anishkumar; Nsofor, Ugochukwu; Das, Ujjwal ACS Applied Materials & Interfaces, Vol. 11, Issue 17 https://doi.org/10.1021/acsami.9b01686	journal	April 2019
Thin-film solar cells: device measurements and analysis Hegedus, Steven S.; Shafarman, William N. Progress in Photovoltaics: Research and Applications, Vol. 12, Issue 23 https://doi.org/10.1002/pip.518	journal	March 2004
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors Lang, D. V. Journal of Applied Physics, Vol. 45, Issue 7 https://doi.org/10.1063/1.1663719	journal	July 1974
Silicon Heterojunction System Field Performance Jordan, Dirk C.; Deline, Chris; Johnston, Steve IEEE Journal of Photovoltaics, Vol. 8, Issue 1 https://doi.org/10.1109/JPHOTOV.2017.2765680	journal	January 2018
Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology Yoshikawa, Kunta; Yoshida, Wataru; Irie, Toru Solar Energy Materials and Solar Cells, Vol. 173 https://doi.org/10.1016/j.solmat.2017.06.024	journal	December 2017
Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation Lu, Meijun; Bowden, Stuart; Das, Ujjwal Applied Physics Letters, Vol. 91, Issue 6 https://doi.org/10.1063/1.2768635	journal	August 2007
Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment Descoeudres, A.; Barraud, L.; De Wolf, Stefaan Applied Physics Letters, Vol. 99, Issue 12 https://doi.org/10.1063/1.3641899	journal	September 2011
Hydrogen-Induced Degradation Wenham, Alison Ciesla nee; Wenham, Stuart; Chen, Ran 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) https://doi.org/10.1109/PVSC.2018.8548100	conference	June 2018
Light induced changes in the amorphous—crystalline silicon heterointerface Mahtani, Pratish; Varache, Renaud; Jovet, Bastien Journal of Applied Physics, Vol. 114, Issue 12 https://doi.org/10.1063/1.4821235	journal	September 2013
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics Feldmann, Frank; Bivour, Martin; Reichel, Christian Solar Energy Materials and Solar Cells, Vol. 120 https://doi.org/10.1016/j.solmat.2013.09.017	journal	January 2014
a-Si:H/c-Si interface hydrogenation for implied V_oc = 755 mV in Silicon heterojunction solar cell Soman, Anishkumar; Nsofor, Ugochukwu; Das, Ujjwal 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC40753.2019.8980808	conference	June 2019

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SOLAR ENERGY
degradation
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hydrogen passivation
light soaking
reliability
silicon solar cells

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