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Bandgap Dependence of Near-Conduction Band State in (AgyCu1-y)(InXGa1-x)Se2 Solar Cells

Conference ·
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(Ag, CU) (In,Ga)Se2 -based solar cells have achieved high collection efficiencies, but defects still limit efficiencies well below the theoretical limit. The near-conduction band defect, typically observed at EV+0.98 eV, has been ubiquitous across (Ag,Cu)(In,Ga)Se2 samples from multiple vendors. The current work explores a wider range of composition and demonstrates the trap energy varies relative to the valence band but is approximately constant relative to the conduction band (~Ec-0.13 eV). There is also no definitive dependence of the trap concentration on composition.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1913961
Report Number(s):
NREL/CP-5900-85063; MainId:85836; UUID:7f1d3f0f-b904-411d-bf2b-b4933d58ec44; MainAdminID:68508
Resource Relation:
Conference: Presented at the 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), 5-10 June 2022, Philadelphia, Pennsylvania
Country of Publication:
United States
Language:
English

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Related Subjects

SOLAR ENERGY
ACIGS
ACIS
CIGS
CIS
deep level optical spectroscopy
defects
DLOS
traps