Re-use of GaAs substrates for epitaxial lift-off III-V solar cells

Conference · Sat Dec 31 00:00:00 EST 1994

OSTI ID:191153

Hageman, P R; Geelen, A van; Thomeer, R A.J.; Giling, L J ^[1]

---

1. Univ. of Nijmegen (Netherlands). Dept. of Experimental Solid State Physics

The ELO (epitaxial lift off) method is generally considered to be very suitable for separation of the thin epilayer from its substrate. The used method is very gentle and hardly effects the substrate. The authors present further improvements on this method resulting in successful separation of crack free thin films as large as 2 inch substrates. Re-use of the substrates has been investigated with two dimensional optical step profiling to determine the roughness after the different surface cleaning procedures and after the ELO lift-off.Also the quality of epilayers after growing on used substrates is determined. In this paper it is demonstrated that substrates can be used several times without loss of epilayer quality.

• OSTI ID: 191153
• Report Number(s): CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9610%%154
• Resource Relation: Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty-fourth IEEE photovoltaic specialists conference -- 1994. Volume 2; PB: 1268 p.
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
PERFORMANCE
ALUMINIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
VAPOR PHASE EPITAXY
ELECTRICAL PROPERTIES
ALUMINIUM ARSENIDES
ORGANOMETALLIC COMPOUNDS
THIN FILMS
DOPED MATERIALS
SILANES
SUBSTRATES
REMOVAL
RECYCLING
CARRIER LIFETIME
CARRIER MOBILITY
PHOTOLUMINESCENCE
SURFACES
DAMAGE