Voltage performance of quantum well solar cells in the Al{sub x}Ga{sub 1{minus}x}As/GaAs and the GaAs/In{sub y}Ga{sub 1{minus}y}As material systems

Title: Voltage performance of quantum well solar cells in the Al{sub x}Ga{sub 1{minus}x}As/GaAs and the GaAs/In{sub y}Ga{sub 1{minus}y}As material systems

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Abstract

The open circuit voltage V{sub oc} and reference voltage V{sub ref}, defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogeneous control cells.Samples were grown in the Al{sub x}Ga{sub 1{minus}x}As/GaAs and GaAs/In{sub y}Ga{sub 1{minus}y}As material systems. For both combinations, QW solar cells show a better voltage performance in V{sub oc} and V{sub ref} than one would expect from a single bandgap solar cell with the same effective absorption bandgap E{sub a}. For the AlGaAs/GaAs cells, V{sub oc} is related to structural parameters of the QW cells such as the well width L{sub W} and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between V{sub ref} and the barrier width L{sub B}, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction.

Authors:

Haarpaintner, G; Barnes, J; Barnham, K W.J. ^[1]

Imperial Coll. of Science, Technology and Medicine, London (United Kingdom)

Publication Date:: 1994-12-31

OSTI Identifier:: 191123

Report Number(s):: CONF-941203-
ISBN 0-7803-1459-X; TRN: IM9610%%124

Resource Type:: Book

Resource Relation:: Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty-fourth IEEE photovoltaic specialists conference -- 1994. Volume 2; PB: 1268 p.

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ALUMINIUM ARSENIDE SOLAR CELLS; PERFORMANCE; GALLIUM ARSENIDE SOLAR CELLS; INDIUM ARSENIDES; VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; ELECTRICAL PROPERTIES; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; ANTIREFLECTION COATINGS; WINDOWS; CURRENT DENSITY; ELECTRIC POTENTIAL; ILLUMINANCE; DEPLETION LAYER; RECOMBINATION; EXPERIMENTAL DATA

Citation Formats


                    Haarpaintner, G, Barnes, J, and Barnham, K W.J. Voltage performance of quantum well solar cells in the Al{sub x}Ga{sub 1{minus}x}As/GaAs and the GaAs/In{sub y}Ga{sub 1{minus}y}As material systems.  United States: N. p., 1994. 
        Web.

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                    Haarpaintner, G, Barnes, J, & Barnham, K W.J. Voltage performance of quantum well solar cells in the Al{sub x}Ga{sub 1{minus}x}As/GaAs and the GaAs/In{sub y}Ga{sub 1{minus}y}As material systems.  United States.

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                    Haarpaintner, G, Barnes, J, and Barnham, K W.J. Sat .  
        "Voltage performance of quantum well solar cells in the Al{sub x}Ga{sub 1{minus}x}As/GaAs and the GaAs/In{sub y}Ga{sub 1{minus}y}As material systems".  United States.

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@article{osti_191123,

  title        = {Voltage performance of quantum well solar cells in the Al{sub x}Ga{sub 1{minus}x}As/GaAs and the GaAs/In{sub y}Ga{sub 1{minus}y}As material systems},

  author       = {Haarpaintner, G and Barnes, J and Barnham, K W.J.},

  abstractNote = {The open circuit voltage V{sub oc} and reference voltage V{sub ref}, defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogeneous control cells.Samples were grown in the Al{sub x}Ga{sub 1{minus}x}As/GaAs and GaAs/In{sub y}Ga{sub 1{minus}y}As material systems. For both combinations, QW solar cells show a better voltage performance in V{sub oc} and V{sub ref} than one would expect from a single bandgap solar cell with the same effective absorption bandgap E{sub a}. For the AlGaAs/GaAs cells, V{sub oc} is related to structural parameters of the QW cells such as the well width L{sub W} and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between V{sub ref} and the barrier width L{sub B}, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/191123},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {12}

}

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