Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

Good, Brian; Colegrove, Eric; Reese, Matthew O.

doi:10.1109/PVSC48317.2022.9938827

Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

Conference · 14 November 2022

DOI:https://doi.org/10.1109/PVSC48317.2022.9938827· OSTI ID:1909904

Good, Brian; ; Reese, Matthew O.

Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

DOE Contract Number:: AC36-08GO28308;

OSTI ID:: 1909904

Report Number(s):: NREL/CP-5K00-81909; MainId:82682; UUID:d7f532c7-e588-4be8-8cdc-641469a5a69f; MainAdminID:68492

Conference Information:: Presented at the 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), 5-10 June 2022, Philadelphia, Pennsylvania

Country of Publication:: United States

Language:: English

References (8)

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arsenic
cadmium telluride
CdSeTe
compensation
doping
modeling
simulation
SOLAR ENERGY

Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

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References (8)

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