Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance
Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1909904
- Report Number(s):
- NREL/CP-5K00-81909; MainId:82682; UUID:d7f532c7-e588-4be8-8cdc-641469a5a69f; MainAdminID:68492
- Resource Relation:
- Conference: Presented at the 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), 5-10 June 2022, Philadelphia, Pennsylvania
- Country of Publication:
- United States
- Language:
- English
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