Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms

Chen, Zeyu; Peng, Hongyu; Liu, Yafei; Cheng, Qianyu; Hu, Shanshan; Raghothamachar, Balaji; Dudley, Michael; Ghandi, Reza; Kennerly, Stacey; Thieberger, Peter

doi:10.4028/p-m7sftq

Title: Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms

Journal Article · 01 May 2022 · Mater. Sci. Forum

DOI:https://doi.org/10.4028/p-m7sftq· OSTI ID:1901321

Chen, Zeyu; Peng, Hongyu; Liu, Yafei; Cheng, Qianyu; Hu, Shanshan; Raghothamachar, Balaji; Dudley, Michael; Ghandi, Reza; Kennerly, Stacey; Thieberger, Peter

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: DOE - Office Of Science; DOE - BASIC ENERGY SCIENCES

OSTI ID:: 1901321

Journal Information:: Mater. Sci. Forum, Vol. 1062

Country of Publication:: United States

Language:: ENGLISH

References (11)

An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS Liu, Tao; Hu, Shengdong; Wang, Jian'an IEEE Access, Vol. 7 https://doi.org/10.1109/access.2019.2944991	journal	January 2019
Ion implantation technology in SiC for power device applications Kimoto, Tsunenobu; Kawahara, Koutaro; Niwa, Hiroki 2014 International Workshop on Junction Technology (IWJT) https://doi.org/10.1109/iwjt.2014.6842018	conference	May 2014
Nitrogen Implantation to Improve Electron Channel Mobility in 4H-SiC MOSFET Moscatelli, Francesco; Poggi, Antonella; Solmi, Sandro IEEE Transactions on Electron Devices, Vol. 55, Issue 4 https://doi.org/10.1109/ted.2008.917107	journal	April 2008
Novel high-energy ion implantation facility using a 15 MV Tandem Van de Graaff accelerator Thieberger, P.; Carlson, C.; Steski, D. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 442 https://doi.org/10.1016/j.nimb.2019.01.016	journal	March 2019
4.5kV SiC Charge-Balanced MOSFETs with Ultra-Low On-Resistance Ghandi, Reza; Bolotnikov, Alexander; Kennerly, Stacey 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) https://doi.org/10.1109/ispsd46842.2020.9170171	conference	September 2020
Effect of temperature on Xe implantation-induced damage in 4H-SiC Jiang, C.; Declémy, A.; Beaufort, M-F Journal of Physics: Conference Series, Vol. 1190, Issue 1 https://doi.org/10.1088/1742-6596/1190/1/012015	journal	May 2019
Strain Measurements on Nitrogen Implanted 4H-SiC Amigou, Matthieu; Beaufort, Marie France; Declémy, Alain Materials Science Forum, Vol. 679-680 https://doi.org/10.4028/www.scientific.net/msf.679-680.185	journal	March 2011
Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography Guo, Jianqiu; Yang, Yu; Raghothamachar, Balaji Journal of Electronic Materials, Vol. 47, Issue 2 https://doi.org/10.1007/s11664-017-5789-x	journal	September 2017
Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals Ailihumaer, Tuerxun; Yang, Yu; Guo, Jianqiu Journal of Electronic Materials, Vol. 48, Issue 5 https://doi.org/10.1007/s11664-019-07077-x	journal	February 2019
Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation Chen, Zeyu; Liu, Yafei; Peng, Hongyu ECS Transactions, Vol. 104, Issue 7 https://doi.org/10.1149/10407.0075ecst	journal	October 2021
The measurement of strain fields by X-ray topographic contour mapping Stock, S. R.; Chen, Haydn; Birnbaum, H. K. Philosophical Magazine A, Vol. 53, Issue 1 https://doi.org/10.1080/01418618608242808	journal	January 1986

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