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Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray

Journal Article · · J. Appl. Crystallogr.
Research Organization:
Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
Sponsoring Organization:
DOE - Office Of Science
DOE Contract Number:
NONE;
OSTI ID:
1901251
Journal Information:
J. Appl. Crystallogr., Journal Name: J. Appl. Crystallogr. Journal Issue: (2) Vol. 54
Country of Publication:
United States
Language:
ENGLISH

References (12)

Defect analysis in crystals using X-ray topography journal January 2006
Nucleation of threading dislocations in sublimation grown silicon carbide journal February 2002
Sense determination of micropipes via grazing-incidence synchrotron white beam x-ray topography in 4H silicon carbide journal August 2007
Direct determination of dislocation sense of closed-core threading screw dislocations using synchrotron white beam x-ray topography in 4H silicon carbide journal October 2007
The displacement and stress fields of a general dislocation close to a free surface of an isotropic solid journal September 1981
CXL. Dislocations in thin plates journal December 1951
Assessment of orientation and extinction contrast contributions to the direct dislocation image journal January 1999
Surface-relaxation contributions to axial screw dislocation contrast in synchrotron white-beam X-ray topographs of SiC journal November 2002
Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayers journal May 2005
On the widths of dislocation images in X-ray topography under low-absorption conditions journal December 1975
Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image journal June 1999
Influence of Surface Relaxation and Multi-Dislocation Strain Field Interactions on X-ray Topographic Images of Dislocations in Semiconductor Materials journal January 1992

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