Presynthetic Redox Gated Metal-to-Insulator Transition and Photothermoelectric Properties in Nickel

Xie, Jiaze; Pan, Jia-Ahn; Cheng, Baorui; Ma, Tengzhou; Filatov, Alexander S.; Patel, Shrayesh N.; Park, Jiwoong; Talapin, Dmitri V.; Anderson, John S.

doi:10.1021/jacs.2c07864

Presynthetic Redox Gated Metal-to-Insulator Transition and Photothermoelectric Properties in Nickel

Journal Article · 01 October 2022 · J. Am. Chem. Soc.

DOI:https://doi.org/10.1021/jacs.2c07864· OSTI ID:1901140

Xie, Jiaze; Pan, Jia-Ahn; Cheng, Baorui; Ma, Tengzhou; Filatov, Alexander S.; Patel, Shrayesh N.; Park, Jiwoong; Talapin, Dmitri V.; Anderson, John S.

Research Organization:: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)

Sponsoring Organization:: DOE - Office Of Science; U.S. ARMY RESEARCH

OSTI ID:: 1901140

Journal Information:: J. Am. Chem. Soc., Journal Name: J. Am. Chem. Soc. Journal Issue: (41) Vol. 144

Country of Publication:: United States

Language:: ENGLISH

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