skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

Journal Article · · MRS Communications

Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for the longevity and effectiveness of these devices. In this study, CVD-grown MoS2 crystals with pre-existing defects from the growth process were subjected to DC-voltages of 10 V, 20 V, and 40 V for up to 96 h. The presence of pre-existing defects was found to lead to more extensive material damage that scales with voltage and time. SEM, AFM, Raman and photoluminescence imaging indicated regions of increased defect concentration post-electrical stress.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
Report Number(s):
NREL/JA-5900-83396; MainId:84169; UUID:6f9183d7-acec-4e84-8a02-b89e7c587d96; MainAdminID:67775
Journal Information:
MRS Communications, Vol. 12
Country of Publication:
United States

References (17)

Capping Layers to Improve the Electrical Stress Stability of MoS 2 Transistors journal July 2020
Photothermoelectric and photovoltaic effects both present in MoS2 journal January 2015
Large-Area Epitaxial Monolayer MoS 2 journal February 2015
Stabilizing the heavily-doped and metallic phase of MoS2 monolayers with surface functionalization journal December 2021
Quenching induced fracture behaviors of CVD-grown polycrystalline molybdenum disulfide films journal January 2016
Orientation-specific transgranular fracture behavior of CVD-grown monolayer MoS 2 single crystal journal April 2017
Transfer of large-scale two-dimensional semiconductors: challenges and developments journal May 2021
Monolayer MoS2 Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics journal April 2020
Nanomechanical mapping of soft matter by bimodal force microscopy journal August 2013
Kelvin probe force microscopy and its application journal January 2011
Accelerated reliability testing of highly aligned single-walled carbon nanotube networks subjected to DC electrical stressing journal May 2011
Single-Layer MoS 2 Electronics journal December 2014
111 years of Brownian motion journal January 2016
Electrostatic properties of few-layer MoS 2 films journal April 2013
A- and B-exciton photoluminescence intensity ratio as a measure of sample quality for transition metal dichalcogenide monolayers journal November 2018
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons journal September 2013
Enhanced photoluminescence of monolayer MoS2 on stepped gold structure journal July 2022