Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

Mansfield, Elisabeth; Goggin, David; Killgore, Jason; Aubry, Taylor

doi:10.1557/s43579-022-00261-x

Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

Journal Article · 16 September 2022 · MRS Communications

DOI:https://doi.org/10.1557/s43579-022-00261-x· OSTI ID:1898026

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Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for the longevity and effectiveness of these devices. In this study, CVD-grown MoS2 crystals with pre-existing defects from the growth process were subjected to DC-voltages of 10 V, 20 V, and 40 V for up to 96 h. The presence of pre-existing defects was found to lead to more extensive material damage that scales with voltage and time. SEM, AFM, Raman and photoluminescence imaging indicated regions of increased defect concentration post-electrical stress.

Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1898026

Report Number(s):: NREL/JA-5900-83396; MainId:84169; UUID:6f9183d7-acec-4e84-8a02-b89e7c587d96; MainAdminID:67775

Journal Information:: MRS Communications, Vol. 12

Country of Publication:: United States

Language:: English

References (17)

Capping Layers to Improve the Electrical Stress Stability of MoS ₂ Transistors Doherty, James L.; Noyce, Steven G.; Cheng, Zhihui ACS Applied Materials & Interfaces, Vol. 12, Issue 31 https://doi.org/10.1021/acsami.0c08647	journal	July 2020
Photothermoelectric and photovoltaic effects both present in MoS2 Zhang, Youwei; Li, Hui; Wang, Lu Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep07938	journal	January 2015
Large-Area Epitaxial Monolayer MoS ₂ Dumcenco, Dumitru; Ovchinnikov, Dmitry; Marinov, Kolyo ACS Nano, Vol. 9, Issue 4 https://doi.org/10.1021/acsnano.5b01281	journal	February 2015
Stabilizing the heavily-doped and metallic phase of MoS₂ monolayers with surface functionalization Zhang, Hanyu; Koledin, Tamara D.; Wang, Xiang 2D Materials, Vol. 9, Issue 1 https://doi.org/10.1088/2053-1583/ac3f44	journal	December 2021
Quenching induced fracture behaviors of CVD-grown polycrystalline molybdenum disulfide films Hao, Song; Yang, Bingchu; Gao, Yongli RSC Advances, Vol. 6, Issue 64 https://doi.org/10.1039/C6RA08543A	journal	January 2016
Orientation-specific transgranular fracture behavior of CVD-grown monolayer MoS ₂ single crystal Hao, Song; Yang, Bingchu; Gao, Yongli Applied Physics Letters, Vol. 110, Issue 15 https://doi.org/10.1063/1.4979974	journal	April 2017
Transfer of large-scale two-dimensional semiconductors: challenges and developments Watson, Adam J.; Lu, Wenbo; Guimarães, Marcos H. D. 2D Materials, Vol. 8, Issue 3 https://doi.org/10.1088/2053-1583/abf234	journal	May 2021
Monolayer MoS₂ Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics Sharma, Madan; Singh, Aditya; Singh, Rajendra ACS Applied Nano Materials, Vol. 3, Issue 5 https://doi.org/10.1021/acsanm.0c00551	journal	April 2020
Nanomechanical mapping of soft matter by bimodal force microscopy Garcia, Ricardo; Proksch, Roger European Polymer Journal, Vol. 49, Issue 8 https://doi.org/10.1016/j.eurpolymj.2013.03.037	journal	August 2013
Kelvin probe force microscopy and its application Melitz, Wilhelm; Shen, Jian; Kummel, Andrew C. Surface Science Reports, Vol. 66, Issue 1 https://doi.org/10.1016/j.surfrep.2010.10.001	journal	January 2011
Accelerated reliability testing of highly aligned single-walled carbon nanotube networks subjected to DC electrical stressing Strus, Mark C.; Chiaramonti, Ann N.; Kim, Young Lae Nanotechnology, Vol. 22, Issue 26 https://doi.org/10.1088/0957-4484/22/26/265713	journal	May 2011
Single-Layer MoS ₂ Electronics Lembke, Dominik; Bertolazzi, Simone; Kis, Andras Accounts of Chemical Research, Vol. 48, Issue 1 https://doi.org/10.1021/ar500274q	journal	December 2014
111 years of Brownian motion Bian, Xin; Kim, Changho; Karniadakis, George Em Soft Matter, Vol. 12, Issue 30 https://doi.org/10.1039/C6SM01153E	journal	January 2016
Electrostatic properties of few-layer MoS ₂ films Hao, Guolin; Huang, Zongyu; Liu, Yundan AIP Advances, Vol. 3, Issue 4 https://doi.org/10.1063/1.4802921	journal	April 2013
A- and B-exciton photoluminescence intensity ratio as a measure of sample quality for transition metal dichalcogenide monolayers McCreary, Kathleen M.; Hanbicki, Aubrey T.; Sivaram, Saujan V. APL Materials, Vol. 6, Issue 11 https://doi.org/10.1063/1.5053699	journal	November 2018
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons Tongay, Sefaattin; Suh, Joonki; Ataca, Can Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep02657	journal	September 2013
Enhanced photoluminescence of monolayer MoS₂ on stepped gold structure Liu, Yu-Chun; Tan, Xin; Shen, Tian-Ci Chinese Physics B, Vol. 31, Issue 8 https://doi.org/10.1088/1674-1056/ac657b	journal	July 2022

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