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Title: Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

Journal Article · · MRS Communications

Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for the longevity and effectiveness of these devices. In this study, CVD-grown MoS2 crystals with pre-existing defects from the growth process were subjected to DC-voltages of 10 V, 20 V, and 40 V for up to 96 h. The presence of pre-existing defects was found to lead to more extensive material damage that scales with voltage and time. SEM, AFM, Raman and photoluminescence imaging indicated regions of increased defect concentration post-electrical stress.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1898026
Report Number(s):
NREL/JA-5900-83396; MainId:84169; UUID:6f9183d7-acec-4e84-8a02-b89e7c587d96; MainAdminID:67775
Journal Information:
MRS Communications, Vol. 12
Country of Publication:
United States
Language:
English

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