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Organic vapor jet deposition using an exhaust

Patent ·
OSTI ID:1893090
;

Methods and systems for organic vapor jet deposition are provided, where an exhaust is disposed between adjacent nozzles. The exhaust may reduce pressure buildup in the nozzles and between the nozzles and the substrate, leading to improved deposition profiles, resolution, and improved nozzle-to-nozzle uniformity. The exhaust may be in fluid communication with an ambient vacuum, or may be directly connected to a vacuum source.

Research Organization:
Univ. of Michigan, Ann Arbor, NY (United States); Princeton Univ., NJ (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC26-04NT42273
Assignee:
The Regents of the University of Michigan (Ann Arbor, MI); The Trustees of Princeton University (Princeton, NJ)
Patent Number(s):
11,374,172
Application Number:
12/974,070
OSTI ID:
1893090
Country of Publication:
United States
Language:
English

References (1)

Direct mask-free patterning of molecular organic semiconductors using organic vapor jet printing journal October 2004

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