MOCVD Surface Preparation of V-Groove Si for III-V Growth

Saenz, Theresa E.; Nandy, Manali; Paszuk, Agnieszka; Ostheimer, David; Koch, Juliane; McMahon, William E.; Zimmerman, Jeramy D.; Hannappel, Thomas; Warren, Emily L.

doi:10.1016/j.jcrysgro.2022.126843

MOCVD Surface Preparation of V-Groove Si for III-V Growth

Journal Article · 28 August 2022 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2022.126843· OSTI ID:1889661

; Nandy, Manali; Paszuk, Agnieszka; Ostheimer, David; Koch, Juliane; McMahon, William E.; Zimmerman, Jeramy D.; Hannappel, Thomas;

V-groove nanopatterning of Si substrates has recently demonstrated promise for achieving high-quality III-V-on-Si epitaxy while providing a lower-cost processing route than chemo-mechanical polishing to produce epi-ready planar wafers. A key factor in determining the crystalline quality of III-V buffer layers is the Si surface structure and its chemical composition. Unlike planar Si surfaces, the surfaces of V-grooves prior to growth have not been studied in detail. Here, we study the surface of V-groove Si prepared for GaP nucleation via X-ray photoelectron spectroscopy and low-energy electron diffraction. We identify several pretreatments, using both 830 and 1000 annealing under an As background pressure, as being suitable for deoxidizing and cleaning the V-groove Si surface. The V-groove Si was found to behave similarly to reference Si(0 0 1) and Si(1 1 1) planar samples, demonstrating that in situ techniques such as reflection anisotropy spectroscopy can be used on reference samples to infer the state of the V-groove surface, and indicating that the extensive research on planar Si surfaces can be directly applied to V-grooves.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1889661

Report Number(s):: NREL/JA-5900-81690; MainId:82463; UUID:b3381d31-2893-42e0-8891-2558837a213c; MainAdminID:63543

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 597

Country of Publication:: United States

Language:: English

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III-V epitaxy
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