skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: MOCVD Surface Preparation of V-Groove Si for III-V Growth

Journal Article · · Journal of Crystal Growth

V-groove nanopatterning of Si substrates has recently demonstrated promise for achieving high-quality III-V-on-Si epitaxy while providing a lower-cost processing route than chemo-mechanical polishing to produce epi-ready planar wafers. A key factor in determining the crystalline quality of III-V buffer layers is the Si surface structure and its chemical composition. Unlike planar Si surfaces, the surfaces of V-grooves prior to growth have not been studied in detail. Here, we study the surface of V-groove Si prepared for GaP nucleation via X-ray photoelectron spectroscopy and low-energy electron diffraction. We identify several pretreatments, using both 830 and 1000 annealing under an As background pressure, as being suitable for deoxidizing and cleaning the V-groove Si surface. The V-groove Si was found to behave similarly to reference Si(0 0 1) and Si(1 1 1) planar samples, demonstrating that in situ techniques such as reflection anisotropy spectroscopy can be used on reference samples to infer the state of the V-groove surface, and indicating that the extensive research on planar Si surfaces can be directly applied to V-grooves.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
Report Number(s):
NREL/JA-5900-81690; MainId:82463; UUID:b3381d31-2893-42e0-8891-2558837a213c; MainAdminID:63543
Journal Information:
Journal of Crystal Growth, Vol. 597
Country of Publication:
United States

References (25)

23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations journal September 2021
Novel Light Source Integration Approaches for Silicon Photonics: Novel Light Source Integration Approaches for Silicon Photonics journal July 2017
Polar-on-nonpolar epitaxy journal February 1987
Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory journal December 2018
MOVPE Grown Gallium Phosphide–Silicon Heterojunction Solar Cells journal March 2017
Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy journal June 2009
GaP-nucleation on exact Si (001) substrates for III/V device integration journal January 2011
Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience journal December 2018
Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility journal April 2016
Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH 3 surface preparation journal August 2015
GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation journal June 2018
High-Temperature Nucleation of GaP on V-Grooved Si journal September 2020
Enabling low-cost III-V/Si integration through nucleation of GaP on v-grooved Si substrates
  • Warren, Emily L.; Makoutz, Emily A.; Saenz, Theresa
  • 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
conference June 2018
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches journal August 2018
MOCVD grown low dislocation density GaAs-on-V-groove patterned (001) Si for 1.3 μ m quantum dot laser applications journal April 2019
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics journal December 2017
Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire Growth journal October 2016
Room-temperature InP distributed feedback laser array directly grown on silicon journal October 2015
O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si journal January 2017
Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates journal May 2016
GaAs Solar Cells on Nanopatterned Si Substrates journal November 2018
Reflection anisotropy spectroscopy journal May 2005
A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD journal August 2021
An RDS, LEED, and STM Study of MOCVD-Prepared Si(100) surfaces journal December 2004
Apparatus for investigating metalorganic chemical vapor deposition-grown semiconductors with ultrahigh-vacuum based techniques journal May 2004