Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotr

Liu, Yafei; Chen, Zeyu; Hu, Shanshan; Peng, Hongyu; Cheng, Qianyu; Raghothamachar, Balaji; Dudley, Michael

doi:10.1016/j.jcrysgro.2022.126559

Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotr

Journal Article · 01 April 2022 · J. Cryst. Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2022.126559· OSTI ID:1877231

Liu, Yafei; Chen, Zeyu; Hu, Shanshan; Peng, Hongyu; Cheng, Qianyu; Raghothamachar, Balaji; Dudley, Michael

Research Organization:: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)

Sponsoring Organization:: DOE - Office Of Science; DOE - BASIC ENERGY SCIENCES

OSTI ID:: 1877231

Journal Information:: J. Cryst. Growth, Journal Name: J. Cryst. Growth Vol. 583

Country of Publication:: United States

Language:: ENGLISH

References (23)

Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography Kim, Jaemyung; Seo, Okkyun; Song, Chulho CrystEngComm, Vol. 21, Issue 14 https://doi.org/10.1039/C8CE01906A	journal	January 2019
Study of residual strains in wafer crystals by means of lattice tilt mapping Ferrari, C.; Korytar, D.; Kumar, J. Il Nuovo Cimento D, Vol. 19, Issue 2-4 https://doi.org/10.1007/BF03040969	journal	February 1997
Microstructure Analysis of GaN Epitaxial Layers During Ion Implantation Using Synchrotron X-Ray Topography Liu, Yafei; Peng, Hongyu; Chen, Zeyu ECS Transactions, Vol. 104, Issue 7 https://doi.org/10.1149/10407.0113ecst	journal	October 2021
Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates Lou, Yanfang; Song, Chulho; Chen, Yanna CrystEngComm, Vol. 20, Issue 20 https://doi.org/10.1039/C8CE00229K	journal	January 2018
Anisotropic mosaicity and lattice-plane twisting of an m -plane GaN homoepitaxial layer Kim, Jaemyung; Seo, Okkyun; Tanaka, Atsushi CrystEngComm, Vol. 21, Issue 27 https://doi.org/10.1039/C9CE00463G	journal	January 2019
X-ray topography characterization of gallium nitride substrates for power device development Raghothamachar, Balaji; Liu, Yafei; Peng, Hongyu Journal of Crystal Growth, Vol. 544 https://doi.org/10.1016/j.jcrysgro.2020.125709	journal	August 2020
Bulk ammonothermal GaN Dwiliński, R.; Doradziński, R.; Garczyński, J. Journal of Crystal Growth, Vol. 311, Issue 10 https://doi.org/10.1016/j.jcrysgro.2009.01.052	journal	May 2009
Ion implantation into GaN Kucheyev, S. O.; Williams, J. S.; Pearton, S. J. Materials Science and Engineering: R: Reports, Vol. 33, Issue 2-3 https://doi.org/10.1016/S0927-796X(01)00028-6	journal	May 2001
The measurement of strain fields by X-ray topographic contour mapping Stock, S. R.; Chen, Haydn; Birnbaum, H. K. Philosophical Magazine A, Vol. 53, Issue 1 https://doi.org/10.1080/01418618608242808	journal	January 1986
THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN Maruska, H. P.; Tietjen, J. J. Applied Physics Letters, Vol. 15, Issue 10 https://doi.org/10.1063/1.1652845	journal	November 1969
Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates Liu, Yafei; Raghothamachar, Balaji; Peng, Hongyu Journal of Crystal Growth, Vol. 551 https://doi.org/10.1016/j.jcrysgro.2020.125903	journal	December 2020
GaN Substrate Technologies for Optical Devices Nakamura, Takao; Motoki, Kensaku Proceedings of the IEEE, Vol. 101, Issue 10 https://doi.org/10.1109/JPROC.2013.2274930	journal	October 2013
Inductively coupled plasma etching of GaN Shul, R. J.; McClellan, G. B.; Casalnuovo, S. A. Applied Physics Letters, Vol. 69, Issue 8 https://doi.org/10.1063/1.117077	journal	August 1996
Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography Guo, Jianqiu; Yang, Yu; Raghothamachar, Balaji Journal of Electronic Materials, Vol. 47, Issue 2 https://doi.org/10.1007/s11664-017-5789-x	journal	September 2017
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing Meyers, V.; Rocco, E.; Anderson, T. J. Journal of Applied Physics, Vol. 128, Issue 8 https://doi.org/10.1063/5.0016358	journal	August 2020
Growth of bulk GaN single crystals by flux method Chen, X. L. Science and Technology of Advanced Materials, Vol. 6, Issue 7 https://doi.org/10.1016/j.stam.2005.06.016	journal	January 2005
Bulk GaN single crystals: growth conditions by flux method Song, Youting; Wang, Wenjun; Yuan, Wenxia Journal of Crystal Growth, Vol. 247, Issue 3-4 https://doi.org/10.1016/S0022-0248(02)02014-6	journal	January 2003
Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography Kim, Jaemyung; Seo, Okkyun; Hiroi, Satoshi RSC Advances, Vol. 10, Issue 4 https://doi.org/10.1039/C9RA08882B	journal	January 2020
Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography Kim, Jaemyung; Seo, Okkyun; Kumara, L. S. R. CrystEngComm, Vol. 23, Issue 7 https://doi.org/10.1039/D0CE01572E	journal	January 2021
Strain mapping with parts-per-million resolution in synthetic type-Ib diamond plates Macrander, Albert T.; Krasnicki, Szczesny; Zhong, Yuncheng Applied Physics Letters, Vol. 87, Issue 19 https://doi.org/10.1063/1.2126790	journal	November 2005
Measurements on Local Variations in Spacing and Orientation of the Lattice Plane of Silicon Single Crystals by X-Ray Double-Crystal Topography Kikuta, Seishi; Kohra, Kazutake; Sugita, Yoshimitsu Japanese Journal of Applied Physics, Vol. 5, Issue 11 https://doi.org/10.1143/JJAP.5.1047	journal	November 1966
Crystallographic wet chemical etching of GaN Stocker, D. A.; Schubert, E. F.; Redwing, J. M. Applied Physics Letters, Vol. 73, Issue 18 https://doi.org/10.1063/1.122543	journal	November 1998
Characterization of a 4-inch GaN wafer by X-ray diffraction topography Kim, Jaemyung; Seo, Okkyun; Song, Chulho CrystEngComm, Vol. 20, Issue 48 https://doi.org/10.1039/C8CE01440J	journal	January 2018

Similar Records

Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotr

Journal Article · 2022 · J. Cryst. Growth · OSTI ID:1871724

Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography

Journal Article · 2022 · Journal of Crystal Growth · OSTI ID:1843501

X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices

Journal Article · 2021 · J. Electro. Mater. · OSTI ID:1814982

Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotr

Citation Formats

References (23)

Similar Records

Related Subjects