Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Super

Chen, Zeyu; Liu, Yafei; Peng, Hongyu; Cheng, Qianyu; Hu, Shanshan; Raghothamachar, Balaji; Dudley, Michael; Ghandi, Reza; Kennerly, Stacey; Thieberger, Peter

doi:10.1149/2162-8777/ac7351

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Super

Journal Article · 01 June 2022 · ECS J. Solid State SC

DOI:https://doi.org/10.1149/2162-8777/ac7351· OSTI ID:1872600

Chen, Zeyu; Liu, Yafei; Peng, Hongyu; Cheng, Qianyu; Hu, Shanshan; Raghothamachar, Balaji; Dudley, Michael; Ghandi, Reza; Kennerly, Stacey; Thieberger, Peter

Research Organization:: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)

Sponsoring Organization:: DOE - Office Of Science; DARPA

OSTI ID:: 1872600

Journal Information:: ECS J. Solid State SC, Journal Name: ECS J. Solid State SC Journal Issue: (6) Vol. 11

Country of Publication:: United States

Language:: ENGLISH

References (14)

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Annealing induced extended defects in as-grown and ion-implanted 4H–SiC epitaxial layers Nagano, M.; Tsuchida, H.; Suzuki, T. Journal of Applied Physics, Vol. 108, Issue 1 https://doi.org/10.1063/1.3457840	journal	July 2010
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Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation Chen, Zeyu; Liu, Yafei; Peng, Hongyu ECS Transactions, Vol. 104, Issue 7 https://doi.org/10.1149/10407.0075ecst	journal	October 2021
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Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography Guo, Jianqiu; Yang, Yu; Raghothamachar, Balaji Journal of Electronic Materials, Vol. 47, Issue 2 https://doi.org/10.1007/s11664-017-5789-x	journal	September 2017
Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers Severino, Andrea; Mello, Domenico; Boninelli, Simona Materials Science Forum, Vol. 963 https://doi.org/10.4028/www.scientific.net/MSF.963.407	journal	July 2019
Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing Nagano, Masahiro; Tsuchida, Hidekazu; Suzuki, Takuma Materials Science Forum, Vol. 615-617 https://doi.org/10.4028/www.scientific.net/MSF.615-617.477	journal	March 2009
An investigation on structures and strains of gas-ion-implanted and post-implantation-annealed SiC Zhang, L. Q.; Chen, Y. G.; Liu, H. P. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 474 https://doi.org/10.1016/j.nimb.2020.04.018	journal	July 2020
Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals Ailihumaer, Tuerxun; Yang, Yu; Guo, Jianqiu Journal of Electronic Materials, Vol. 48, Issue 5 https://doi.org/10.1007/s11664-019-07077-x	journal	February 2019

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