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Title: Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Super

Journal Article · · ECS J. Solid State SC

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
DOE - Office Of Science; Defense Advanced Research Projects Agency (DARPA)
OSTI ID:
1872600
Journal Information:
ECS J. Solid State SC, Vol. 11, Issue (6)
Country of Publication:
United States
Language:
ENGLISH

References (14)

SiC power-switching devices-the second electronics revolution? journal June 2002
Novel high-energy ion implantation facility using a 15 MV Tandem Van de Graaff accelerator journal March 2019
About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C journal June 2018
Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation journal October 2021
Ion implantation technology for silicon carbide journal November 2016
Doping-induced strain in N-doped 4H–SiC crystals journal May 2003
Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers journal July 2019
An investigation on structures and strains of gas-ion-implanted and post-implantation-annealed SiC journal July 2020
Annealing induced extended defects in as-grown and ion-implanted 4H–SiC epitaxial layers journal July 2010
Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing journal March 2009
Inducing defects in 3.3 kV SiC MOSFETs by annealing after ion implantation and evaluating their effect on bipolar degradation of the MOSFETs journal November 2018
Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography journal September 2017
Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals journal February 2019
The measurement of strain fields by X-ray topographic contour mapping journal January 1986

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