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Title: Silicon on insulator with active buried regions

Abstract

A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

Inventors:
Publication Date:
Research Org.:
University of California
OSTI Identifier:
187078
Patent Number(s):
US 5,488,012/A/
Application Number:
PAN: 8-137,412
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 426000; PA: EDB-96:038720; SN: 96001532305
DOE Contract Number:
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 30 Jan 1996
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; FABRICATION; ELECTRICAL INSULATORS; DOPED MATERIALS; CHARGE COLLECTION; ETCHING

Citation Formats

McCarthy, A.M. Silicon on insulator with active buried regions. United States: N. p., 1996. Web.
McCarthy, A.M. Silicon on insulator with active buried regions. United States.
McCarthy, A.M. 1996. "Silicon on insulator with active buried regions". United States. doi:.
@article{osti_187078,
title = {Silicon on insulator with active buried regions},
author = {McCarthy, A.M.},
abstractNote = {A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1996,
month = 1
}
  • A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buriedmore » collectors. 10 figs.« less
  • A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.
  • A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.
  • The effect of additional implantation of hydrogen ions into the region of the interface between the split-off silicon layer and the buried insulator in silicon-on-insulator structures and subsequent high-temperature annealing on the parameters of the structures and their radiation resistance is studied. This modification of silicon-on-insulator structures gives rise to the following effects. The mobile charge present in the oxide of the initial structures becomes immobilized, which stabilizes the characteristics of silicon-on-insulator structures and simultaneously increases the fixed charge near the boundary with the split-off silicon layer. Furthermore, additional traps are introduced into the oxide; these are predominantly electron trapsmore » that accumulate negative charge during irradiation. As a result, the charge in the oxide of silicon-on-insulator structures is decreased somewhat at the initial stage of irradiation but then remains nearly unchanged up to doses of 10{sup 7} rad. Conventional accumulation of positive charge occurs at the second boundary of the structure and is typical also of initial (unmodified) silicon-on-insulator structures.« less
  • Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants.