Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others

Mane, Anil U.; Choudhury, Devika; Elam, Jeffrey W.; Letourneau, Steven Payonk

Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others

Patent · 12 October 2021

OSTI ID:1859932

Mane, Anil U.; Choudhury, Devika; Elam, Jeffrey W.; Letourneau, Steven Payonk

An ultra-thin film transition metal dichalcogenide (“TMD”) supported on a support. The TMD is formed from a metal grown by atomic layer deposition (“ALD”) on a substrate. The metal is sulphurized to produce a TMD ultra-thin layer.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-06CH11357

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Number(s):: 11,142,824

Application Number:: 16/391,876

OSTI ID:: 1859932

Country of Publication:: United States

Language:: English

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