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Extraction of Data-Driven Compact Models from High-Fidelity Semiconductor Simulations with Topological Data Analysis.

Conference ·
DOI:https://doi.org/10.2172/1854316· OSTI ID:1854316

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
OSTI ID:
1854316
Report Number(s):
SAND2021-2473C; 694449
Resource Relation:
Conference: Proposed for presentation at the SIAM Conference on Computional Science and Engineering 2021 held March 1-5, 2021 in Ft. Worth, Texas.
Country of Publication:
United States
Language:
English