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Title: Characterization of prismatic slip in PVT-grown AlN crystals

Journal Article · · J. Cryst. Growth

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
DOE - Office Of Science; DOE - BASIC ENERGY SCIENCES
OSTI ID:
1854245
Journal Information:
J. Cryst. Growth, Vol. 584
Country of Publication:
United States
Language:
ENGLISH

References (14)

Ultrawide-bandgap semiconductor AlN crystals: growth and applications journal January 2021
X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates journal July 2020
X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals journal July 2020
X-ray characterization of bulk AIN single crystals grown by the sublimation technique journal March 2003
TEM of Dislocations in AIN journal April 1992
AIN plastic deformation between room temperature and 800°C. I. Dislocation substructure observations journal April 1998
Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation journal November 2012
(Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method journal August 2016
Prismatic Slip in PVT-Grown 4H-SiC Crystals journal November 2016
Thermal stress of a long cylinder heated by thermal radiation journal April 1987
Numerical study of radial temperature distribution in the AlN sublimation growth system: Numerical study of radial temperature journal April 2013
The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4 journal March 2001
A microphysical model of Harper-Dorn creep journal March 1996
Effects of the Peierls stress on the transition from power law creep to Harper-Dorn creep journal April 1995

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