Controlled exposure of CuO thin films through corrosion-protecting, ALD-deposited TiO 2 overlayers

Mehrabi, Hamed; Eddy, Caroline G.; Hollis, Thomas I.; Vance, Jalyn N.; Coridan, Robert H.

doi:10.1515/znb-2021-0117

Controlled exposure of CuO thin films through corrosion-protecting, ALD-deposited TiO ₂ overlayers

Journal Article · 22 September 2021 · Zeitschrift fuer Naturforschung. B: Chemical Sciences

DOI:https://doi.org/10.1515/znb-2021-0117· OSTI ID:1853562

^[1]; Eddy, Caroline G. ^[2]; Hollis, Thomas I. ^[2]; Vance, Jalyn N. ^[2]; ^[3]

Materials Science and Engineering Program , University of Arkansas , Fayetteville , AR 72701 , USA
Department of Chemistry and Biochemistry , University of Arkansas , Fayetteville , AR 72701 , USA
Materials Science and Engineering Program , University of Arkansas , Fayetteville , AR 72701 , USA; Department of Chemistry and Biochemistry , University of Arkansas , Fayetteville , AR 72701 , USA

Abstract

Ultra-thin film coatings are used to protect semiconductor photoelectrodes from the harsh chemical environments common to photoelectrochemical energy conversion. These layers add contact transfer resistance to the interface that can result in a reduction of photoelectrochemical energy conversion efficiency of the photoelectrode. Here, we describe the concept of apartialprotection layer, which allows for direct chemical access to a small fraction of the semiconductor underlayer for further functionalization by an electrocatalyst. The rest of the interface remains protected by a stable, inert protection layer. CuO is used as a model system for this scheme. Atomic layer deposition (ALD)-prepared TiO₂layers on CuO thin films prepared from electrodeposited Cu₂O allow for the control of interfacial morphology to intentionally expose the CuO underlayer. The ALD-TiO₂overlayer shrinks during crystallization, while Cu₂O in the underlayer expands during oxidation. As a result, the TiO₂protection layer cracks to expose the oxidized underlying CuO layer, which can be controlled by preceding thermal oxidation. This work demonstrates a potentially promising strategy for the parallel optimization of photoelectrochemical interfaces for chemical stability and high performance.

Research Organization:: Univ. of Arkansas, Fayetteville, AR (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0020301

OSTI ID:: 1853562

Journal Information:: Zeitschrift fuer Naturforschung. B: Chemical Sciences, Vol. 76, Issue 10-12; ISSN 0932-0776

Country of Publication:: United States

Language:: English

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