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Excitonic effects on electron spin orientation and relaxation in wurtzite GaN

Journal Article · · Physical Review B

Not provided.

Research Organization:
Univ. of Missouri, Columbia, MO (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0019114
OSTI ID:
1852836
Journal Information:
Physical Review B, Vol. 104, Issue 12; ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English

References (32)

Current and Strain-Induced Spin Polarization in InGaN / GaN Superlattices journal March 2007
Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1−xN∕GaN heterostructures under uniaxial strain journal August 2007
Zero-field spin splitting in AlxGa1−xN/GaN heterostructures with various Al compositions journal October 2008
Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain journal November 2010
Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires journal June 2017
Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves journal January 2016
Spin diffusion in bulk GaN measured with MnAs spin injector journal July 2012
Temperature dependence of electron spin relaxation in bulk GaN journal April 2010
Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime journal October 2011
Anisotropic electron spin relaxation in bulk GaN journal November 2009
Optically programmable electron spin memory using semiconductor quantum dots journal November 2004
Optical orientation of electron spins in GaAs quantum wells journal April 2005
Electron spin orientation under in-plane optical excitation in GaAs quantum wells journal October 2012
Dislocation density and band structure effects on spin dynamics in GaN journal January 2009
Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films journal September 2006
Exciton spin relaxation in GaN observed by spin grating experiment journal January 2007
Effect of silicon and oxygen doping on donor bound excitons in bulk GaN journal October 2011
Free exciton emission in GaN journal July 1996
Fundamental optical transitions in GaN journal May 1996
Activation energies of Si donors in GaN journal May 1996
Valence band splittings and band offsets of AlN, GaN, and InN journal October 1996
Subpicosecond exciton spin relaxation in GaN journal October 2004
Experimental investigation of excitonic spin relaxation dynamics in GaN journal March 2008
Enhancement of the electron spin memory by localization on donors in a CdTe quantum well journal May 2007
Spin precession of holes in wurtzite GaN studied using the time-resolved Kerr rotation technique journal September 2005
Spin relaxation time of donor-bound electrons in a CdTe quantum well journal June 2019
Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach journal March 2009
Spin dynamics in semiconductors journal August 2010
Momentum matrix element and conduction band nonparabolicity in wurtzite GaN journal April 2005
Optical excitation density dependence of spin dynamics in bulk cubic GaN journal October 2019
Optical Absorption and Photoluminescence Studies of n-type GaN journal September 1999
Theory of electron spin relaxation in n -doped quantum wells journal February 2010