Stacking-engineered ferroelectricity in bilayer boron nitride

Yasuda, Kenji; Wang, Xirui; Watanabe, Kenji; Taniguchi, Takashi; Jarillo-Herrero, Pablo

doi:10.1126/science.abd3230

Stacking-engineered ferroelectricity in bilayer boron nitride

Journal Article · 25 June 2021 · Science

DOI:https://doi.org/10.1126/science.abd3230· OSTI ID:1852710

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Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.

Stacking a ferroelectric Properties of layered van der Waals structures can depend sensitively on the stacking arrangement of constituent layers. This phenomenon has been exploited to engineer superconducting, correlated insulator, and magnetic states. Two groups now show that ferroelectricity can also be engineered through stacking: Parallel-stacked bilayers of hexagonal boron nitride exhibit ferroelectric switching even though the bulk material is not ferroelectric (see the Perspective by Tsymbal). To explore these phenomena, Yasudaet al.used transport measurements, whereas Vizner Sternet al.focused on atomic force microscopy. Science, abd3230 and abe8177, this issue p.1458and p.1462; see also abi7296, p.1389

Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Iowa State Univ., Ames, IA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0018935; AC02-07CH11358

OSTI ID:: 1852710

Journal Information:: Science, Vol. 372, Issue 6549; ISSN 0036-8075

Publisher:: AAAS

Country of Publication:: United States

Language:: English

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