Magnetic domain engineering in SrRuO3 thin films

Wang, Wenbo; Li, Lin; Liu, Junhua; Chen, Binbin; Ji, Yaoyao; Wang, Jun; Cheng, Guanglei; Lu, Yalin; Rijnders, Guus; Koster, Gertjan; Wu, Weida; Liao, Zhaoliang

doi:10.1038/s41535-020-00275-5

Magnetic domain engineering in SrRuO3 thin films

Journal Article · 16 October 2020 · npj Quantum Materials

DOI:https://doi.org/10.1038/s41535-020-00275-5· OSTI ID:1852514

Wang, Wenbo ^[1]; Li, Lin; Liu, Junhua; Chen, Binbin; Ji, Yaoyao; Wang, Jun; Cheng, Guanglei; Lu, Yalin; Rijnders, Guus; ; ;

OSTI

Abstract

Magnetic domain engineering in ferromagnetic thin films is a very important route toward the rational design of spintronics and memory devices. Although the magnetic domain formation has been extensively studied, artificial control of magnetic domain remains challenging. Here, we present the control of magnetic domain formation in paradigmatic SrRuO₃/SrTiO₃heterostructures via structural domain engineering. The formation of structural twin domains in SrRuO₃films can be well controlled by breaking the SrTiO₃substrate symmetry through engineering miscut direction. The combination of x-ray diffraction analysis of structural twin domains and magnetic imaging of reversal process demonstrates a one-to-one correspondence between structural domains and magnetic domains, which results in multi-step magnetization switching and anomalous Hall effect in films with twin domains. Our work sheds light on the control of the magnetic domain formation via structural domain engineering, which will pave a path toward desired properties and devices applications.

Research Organization:: Rutgers Univ., Piscataway, NJ (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0018153;

OSTI ID:: 1852514

Journal Information:: npj Quantum Materials, Journal Name: npj Quantum Materials Journal Issue: 1 Vol. 5; ISSN 2397-4648

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

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