Charge-carrier-mediated lattice softening contributes to high zT in thermoelectric semiconductors

Slade, Tyler J.; Anand, Shashwat; Wood, Max; Male, James P.; Imasato, Kazuki; Cheikh, Dean; Al Malki, Muath M.; Agne, Matthias T.; Griffith, Kent J.; Bux, Sabah K.; Wolverton, Chris; Kanatzidis, Mercouri G.; Snyder, G. Jeffrey

doi:10.1016/j.joule.2021.03.009

Charge-carrier-mediated lattice softening contributes to high zT in thermoelectric semiconductors

Journal Article · 01 May 2021 · Joule

DOI:https://doi.org/10.1016/j.joule.2021.03.009· OSTI ID:1851945

Slade, Tyler J.; Anand, Shashwat; Wood, Max; Male, James P.; Imasato, Kazuki; Cheikh, Dean; Al Malki, Muath M.; Agne, Matthias T.; Griffith, Kent J.; Bux, Sabah K.; Wolverton, Chris; Kanatzidis, Mercouri G.; Snyder, G. Jeffrey

Not provided.

Research Organization:: Northwestern Univ., Evanston, IL (United States); Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0014520; AC02-76SF00515

OSTI ID:: 1851945

Journal Information:: Joule, Vol. 5, Issue 5; ISSN 2542-4351

Publisher:: Elsevier - Cell Press

Country of Publication:: United States

Language:: English

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