Emergent properties at oxide interfaces controlled by ferroelectric polarization

Ye, Fan; Zhang, Yi; Addiego, Christopher; Xu, Mingjie; Huyan, Huaixun; Ren, Xiaobing; Pan, Xiaoqing

doi:10.1038/s41524-021-00601-w

Emergent properties at oxide interfaces controlled by ferroelectric polarization

Journal Article · 16 August 2021 · npj Computational Materials

DOI:https://doi.org/10.1038/s41524-021-00601-w· OSTI ID:1851927

Ye, Fan; Zhang, Yi; ; Xu, Mingjie; Huyan, Huaixun; Ren, Xiaobing;

Abstract

Ferroelectric materials are characterized by the spontaneous polarization switchable by the applied fields, which can act as a “gate” to control various properties of ferroelectric/insulator interfaces. Here we review the recent studies on the modulation of oxide hetero-/homo-interfaces by ferroelectric polarization. We discuss the potential applications of recently developed four-dimensional scanning transmission electron microscopy and how it can provide insights into the fundamental understanding of ferroelectric polarization-induced phenomena and stimulate future computational studies. Finally, we give the outlook for the potentials, the challenges, and the opportunities for the contribution of materials computation to future progress in the area.

Research Organization:: Univ. of California, Irvine, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0014430

OSTI ID:: 1851927

Journal Information:: npj Computational Materials, Vol. 7, Issue 1; ISSN 2057-3960

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

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Atomic-Scale Compensation Phenomena at Polar Interfaces No authors listed Physical Review Letters https://doi.org/10.1103/PhysRevLett.105.197602		November 2010
Tuning of the Depolarization Field and Nanodomain Structure in Ferroelectric Thin Films No authors listed Nano Letters https://doi.org/10.1021/nl404734z		July 2014
Domain Control in Multiferroic BiFeO₃ through Substrate Vicinality No authors listed Advanced Materials https://doi.org/10.1002/adma.200602972		September 2007
Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films No authors listed Advanced Materials https://doi.org/10.1002/adma.200800823		February 2009
Multiferroics: Past, present, and future No authors listed MRS Bulletin https://doi.org/10.1557/mrs.2017.86		May 2017
Beyond CMOS computing with spin and polarization No authors listed Nature Physics https://doi.org/10.1038/s41567-018-0101-4		April 2018
Oxide Interfaces--An Opportunity for Electronics No authors listed Science https://doi.org/10.1126/science.1181862		March 2010
Structure-Property Relation of SrTiO₃/LaAlO₃ Interfaces No authors listed Advanced Materials https://doi.org/10.1002/adma.200801448		May 2009
Epitaxial BiFeO₃ Multiferroic Thin Film Heterostructures No authors listed Science https://doi.org/10.1126/science.1080615		March 2003
Enhancement of Ferroelectric Polarization Stability by Interface Engineering No authors listed Advanced Materials https://doi.org/10.1002/adma.201104398		January 2012
Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks No authors listed Reviews of Modern Physics https://doi.org/10.1103/RevModPhys.73.783		October 2001
Hollow Electron Ptychographic Diffractive Imaging No authors listed Physical Review Letters https://doi.org/10.1103/PhysRevLett.121.146101		October 2018
Enhancing ferroelectric photovoltaic effect by polar order engineering No authors listed Science Advances https://doi.org/10.1126/sciadv.aat3438		July 2018

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