Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

~23% rear side poly-Si/SiO2 passivated silicon solar cell with optimized ion-implanted boron emitter and screen-printed contacts

Journal Article · · Solar Energy Materials and Solar Cells

Not provided.

Research Organization:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
EE0007554
OSTI ID:
1848525
Journal Information:
Solar Energy Materials and Solar Cells, Vol. 230, Issue C; ISSN 0927-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English

References (24)

Surface passivation of crystalline silicon solar cells: Present and future December 2018
Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects March 2018
Electrical and Microstructural Analysis of Contact Formation on Lightly Doped Phosphorus Emitters Using Thick-Film Ag Screen Printing Pastes January 2014
Extending the limits of screen-printed metallization of phosphorus- and boron-doped surfaces December 2016
High-Throughput Ion-Implantation for Low-Cost High-Efficiency Silicon Solar Cells January 2012
High Throughput Ion-Implantation for Silicon Solar Cells January 2012
Boron Implanted Junction with In Situ Oxide Passivation and Application to p‐PERT Bifacial Silicon Solar Cell February 2019
Correlation between the open-circuit voltage and recombination loss at metal-silicon interfaces of crystalline silicon solar cells June 2020
Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiO x passivated rear emitter December 2018
Contact resistance: Its measurement and relative importance to power loss in a solar cell May 1984
Doping Profile Analysis in Si by Electrochemical Capacitance‐Voltage Measurements February 1995
Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact August 2020
Boron Emitter Passivation With Al2O3 and Al2O3/SiNx Stacks Using ALD Al2O3 January 2013
The Oxidation Rate Dependence of Oxidation‐Enhanced Diffusion of Boron and Phosphorus in Silicon May 1981
Input Parameters for the Simulation of Silicon Solar Cells in 2014 July 2015
Metallization-induced recombination losses of bifacial silicon solar cells: Metallization-induced recombination losses of bifacial silicon solar cells February 2014
Two-Dimensional Modeling of the Metallization-Induced Recombination Losses of Screen-Printed Solar Cells January 2015
Formation of Ag/Al Screen-Printing Contacts on B Emitters January 2015
Structural Investigation of Printed Ag/Al Contacts on Silicon and Numerical Modeling of Their Contact Recombination September 2016
Microstructural characterization and current conduction mechanisms of front-side contact of n-type crystalline Si solar cells with Ag/Al pastes June 2015
Screen printing metallization of boron emitters: Screen printing metallization of boron emitters December 2009
Understanding Metal Induced Recombination Losses in Silicon Solar Cells with Screen Printed Silver Contacts November 2016
High-Temperature Contact Formation on n-Type Silicon: Basic Reactions and Contact Model for Seed-Layer Contacts February 2010
Industrial Screen-Printed n -PERT-RJ Solar Cells: Efficiencies Beyond 22% and Open-Circuit Voltages Approaching 700 mV September 2019