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Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Journal Article · · Physica Status Solidi. A, Applications and Materials Science
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  1. Department of Electrical and Computer Engineering The Ohio State University Columbus OH 43210 USA
  2. Department of Electrical and Computer Engineering The Ohio State University Columbus OH 43210 USA; Department of Materials Science and Engineering The Ohio State University Columbus OH 43210 USA
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Research Organization:
The Ohio State Univ., Columbus, OH (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
AR0001036
OSTI ID:
1848345
Journal Information:
Physica Status Solidi. A, Applications and Materials Science, Vol. 218, Issue 6; ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
English

References (59)

A GaN bulk crystal with improved structural quality grown by the ammonothermal method journal July 2007
Excellent crystallinity of truly bulk ammonothermal GaN journal August 2008
Bulk ammonothermal GaN journal May 2009
5.0 kV breakdown-voltage vertical GaN p–n junction diodes journal February 2018
4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability journal April 2019
Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension journal September 2020
4-kV and 2.8-$\text{m}\Omega $ -cm 2 Vertical GaN p-n Diodes With Low Leakage Currents journal October 2015
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown journal December 2015
Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing journal May 2019
High growth rate metal organic vapor phase epitaxy GaN journal August 2008
High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors journal February 2018
Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmospheric pressure growth journal January 2011
Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon journal September 2015
Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices journal November 2019
Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices journal June 2020
Identification of origin of E C –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy journal June 2020
Why do electron traps at E C –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers? journal October 2020
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN journal January 2014
Impact of carbon on trap states in n -type GaN grown by metalorganic chemical vapor deposition journal January 2004
High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth journal February 2016
Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates journal March 2015
Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition journal December 2016
Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy journal June 2018
Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates journal April 2020
Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations journal March 2018
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN journal January 2000
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN journal July 2002
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes journal November 2011
AlGaN/GaN HFETs on Fe-doped GaN substrates journal June 2010
Spatially-resolved spectroscopic measurements of E c  − 0.57 eV traps in AlGaN/GaN high electron mobility transistors journal May 2013
Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors journal February 2013
Semi-insulating GaN substrates for high-frequency device fabrication journal August 2008
Optically and thermally detected deep levels in n -type Schottky and p+-n GaN diodes journal May 2000
Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes journal October 2016
High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates journal January 2007
Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy journal July 2020
Vertical Power p-n Diodes Based on Bulk GaN journal February 2015
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition journal September 2016
Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes journal December 2015
GaN Schottky Barrier Diodes on Free-Standing GaN Wafer journal January 2017
Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy journal January 2012
Impact of proton irradiation on deep level states in n-GaN journal July 2013
Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films journal May 2008
Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN journal December 2017
Spatial correlation of the E C -0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride journal June 2018
Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy journal February 2002
Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy journal January 2000
A method to determine deep level profiles in highly compensated, wide band gap semiconductors journal April 2005
(Invited) DLTS Studies of Defects in n-GaN journal August 2016
Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy journal October 2019
As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN journal September 2012
DLTS study of n-type GaN grown by MOCVD on GaN substrates journal October 2006
Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films journal September 2006
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides journal March 2016
Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p-n Junction Diodes journal November 2017
Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown journal February 2019
New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor journal August 2013
Optical properties of the deep Mn acceptor in GaN:Mn journal March 2002
Excited states of Fe 3 + in GaN journal February 1997

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