Methods for depositing III-V compositions on silicon

Warren, Emily Lowell; Saenz, Theresa Emily; Zimmerman, Jeramy David

Methods for depositing III-V compositions on silicon

Patent · 14 September 2021

OSTI ID:1840448

Warren, Emily Lowell; Saenz, Theresa Emily; Zimmerman, Jeramy David

The present disclosure relates to a method that includes directing a first precursor that includes a Group III element and a second precursor that includes a Group V element to a chamber containing crystalline silicon, where the crystalline silicon includes a substantially planar surface that is patterned with a plurality of v-grooves and the directing results in the forming of a III-V crystal preferentially on a (111) Si surface of the crystalline silicon.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08GO28308;

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Number(s):: 11,120,990

Application Number:: 16/933,847

OSTI ID:: 1840448

Country of Publication:: United States

Language:: English

References (33)

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