Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples

Peng, Hongyu; Liu, Yafei; Chen, Zeyu; Cheng, Qianyu; Hu, Shanshan; Raghothamachar, Balaji; Dudley, Michael; Sampayan, Kristin; Sampayan, Stephen

doi:10.1016/j.jcrysgro.2021.126459

Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples

Journal Article · 31 January 2022 · J. Cryst. Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2021.126459· OSTI ID:1839756

Peng, Hongyu; Liu, Yafei; Chen, Zeyu; Cheng, Qianyu; Hu, Shanshan; Raghothamachar, Balaji; Dudley, Michael; Sampayan, Kristin; Sampayan, Stephen

Research Organization:: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)

Sponsoring Organization:: DOE - Office Of Science; DOE - OTHER

OSTI ID:: 1839756

Journal Information:: J. Cryst. Growth, Journal Name: J. Cryst. Growth Vol. 579

Country of Publication:: United States

Language:: ENGLISH

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Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g · b = 0 and g · b × l = 0 Peng, Hongyu; Ailihumaer, Tuerxun; Fujie, Fumihiro Journal of Applied Crystallography, Vol. 54, Issue 2 https://doi.org/10.1107/S160057672100025X	journal	February 2021
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4H–SiC photoconductive switching devices for use in high-power applications Doǧan, S.; Teke, A.; Huang, D. Applied Physics Letters, Vol. 82, Issue 18 https://doi.org/10.1063/1.1571667	journal	May 2003
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Dislocation contrast on X-ray topographs under weak diffraction conditions Peng, Hongyu; Ailihumaer, Tuerxun; Liu, Yafei Journal of Applied Crystallography, Vol. 54, Issue 4 https://doi.org/10.1107/S1600576721006592	journal	July 2021
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