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Title: Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples

Journal Article · · J. Cryst. Growth

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
DOE - Office Of Science; DOE - OTHER
Journal Information:
J. Cryst. Growth, Vol. 579
Country of Publication:
United States

References (13)

80‐MW photoconductor power switch journal May 1984
High Voltage Wide Bandgap Photoconductive Switching journal June 2015
Photoconductive and photovoltaic response of high‐dark‐resistivity 6H‐SiC devices journal February 1995
4H–SiC photoconductive switching devices for use in high-power applications journal May 2003
Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties journal March 2021
Performance limiting micropipe defects in silicon carbide wafers journal February 1994
Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes journal January 2001
A dislocation at a free surface journal September 1961
The displacement and stress fields of a general dislocation close to a free surface of an isotropic solid journal September 1981
On the widths of dislocation images in X-ray topography under low-absorption conditions journal December 1975
Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g  ·  b = 0 and g  ·  b  ×  l = 0 journal February 2021
Surface-relaxation contributions to axial screw dislocation contrast in synchrotron white-beam X-ray topographs of SiC journal November 2002
Dislocation contrast on X-ray topographs under weak diffraction conditions journal July 2021