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Title: Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples

Journal Article · · J. Cryst. Growth

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
DOE - Office Of Science; DOE - OTHER
OSTI ID:
1839756
Journal Information:
J. Cryst. Growth, Vol. 579
Country of Publication:
United States
Language:
ENGLISH

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Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties journal March 2021
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The displacement and stress fields of a general dislocation close to a free surface of an isotropic solid journal September 1981
On the widths of dislocation images in X-ray topography under low-absorption conditions journal December 1975
Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g  ·  b = 0 and g  ·  b  ×  l = 0 journal February 2021
Surface-relaxation contributions to axial screw dislocation contrast in synchrotron white-beam X-ray topographs of SiC journal November 2002
Dislocation contrast on X-ray topographs under weak diffraction conditions journal July 2021