Control of CuPt Ordering in GaInP Grown by Hydride Vapor Phase Epitaxy
We investigate the degree of ordering present in GaInP layers grown by dynamic hydride vapor phase epitaxy (D-HVPE) as a function of various growth conditions. We assess order parameter from both transmission electron and x-ray diffraction and compare these trends to the order parameter estimated by the photoluminescence-determined band gap in the GaInP layers. The degree of ordering increases with deposition temperature and the ratio of gas-phase group V to group III precursors in the reactor. We also investigate the effect of growth rate, demonstrating the capability of HVPE to suppress order through rapid growth rates. Such ordering dependences are consistent with mechanisms established for ordering observed in GaInP grown by organometallic vapor phase epitaxy (OMVPE), but with weaker ordering than GaInP grown by that method.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1827900
- Report Number(s):
- NREL/CP-5900-75946; MainId:6998; UUID:dfb8e587-6441-ea11-9c2f-ac162d87dfe5; MainAdminID:63241
- Resource Relation:
- Conference: Presented at the 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 15 June - 21 August 2020
- Country of Publication:
- United States
- Language:
- English
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