Gallium Nitride Superjunction Fin Field Effect Transistor (Continued Funding Report)
Abstract
The goal of this project is to develop the gallium vacancy assisted diffusion (GAID) method in GaN and apply it to demonstrate 2-terminal, 3-terminal, and large area Superjunction-enhanced modules. These devices will find use in high efficiency power conversion applications with the capability of operating at higher voltages, higher frequency, and less loss than comparable stat-of- the-art devices.
- Authors:
-
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1826468
- Report Number(s):
- LLNL-TR-827723
1042991
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Technical Report
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 36 MATERIALS SCIENCE; 42 ENGINEERING
Citation Formats
Allen, Noah P., Voss, L. F., Frye, C. D., KWeon, K., Varley, J., and Shao, Q. Gallium Nitride Superjunction Fin Field Effect Transistor (Continued Funding Report). United States: N. p., 2021.
Web. doi:10.2172/1826468.
Allen, Noah P., Voss, L. F., Frye, C. D., KWeon, K., Varley, J., & Shao, Q. Gallium Nitride Superjunction Fin Field Effect Transistor (Continued Funding Report). United States. https://doi.org/10.2172/1826468
Allen, Noah P., Voss, L. F., Frye, C. D., KWeon, K., Varley, J., and Shao, Q. 2021.
"Gallium Nitride Superjunction Fin Field Effect Transistor (Continued Funding Report)". United States. https://doi.org/10.2172/1826468. https://www.osti.gov/servlets/purl/1826468.
@article{osti_1826468,
title = {Gallium Nitride Superjunction Fin Field Effect Transistor (Continued Funding Report)},
author = {Allen, Noah P. and Voss, L. F. and Frye, C. D. and KWeon, K. and Varley, J. and Shao, Q.},
abstractNote = {The goal of this project is to develop the gallium vacancy assisted diffusion (GAID) method in GaN and apply it to demonstrate 2-terminal, 3-terminal, and large area Superjunction-enhanced modules. These devices will find use in high efficiency power conversion applications with the capability of operating at higher voltages, higher frequency, and less loss than comparable stat-of- the-art devices.},
doi = {10.2172/1826468},
url = {https://www.osti.gov/biblio/1826468},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Oct 18 00:00:00 EDT 2021},
month = {Mon Oct 18 00:00:00 EDT 2021}
}
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