High-Quality SnSe2 Single Crystals: Electronic and Thermoelectric Properties
- Univ. of Ulsan (Korea, Republic of)
- Beihang Univ., Beijing (China)
- Korean Institute of Science and Technology (KIST), Seoul (Korea, Republic of); Pusan National Univ., Busan (Korea, Republic of)
- Korean Institute of Science and Technology (KIST), Seoul (Korea, Republic of)
- Pusan National Univ., Busan (Korea, Republic of)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Phenikaa Univ., Hanoi (Vietnam)
In this work, high-quality SnSe2 single crystals were successfully synthesized using a temperature gradient method. N-type characteristics and strong anisotropic transport properties of SnSe2 single crystals were exhibited between the ab plane and the c-axis. At 673 K, the power factor (PF) value along the ab plane is 3.43 μW cm-1 K-2, while it is 0.92 μW cm-1 K-2 along the c-axis. The ratio between thermal conductivities along the ab plane (κab) and c-axis (κc) is on the order of 7.6 at 300 K, while this value is about 5.6 at 673 K. The thermoelectric figure of merit (ZT) in the c-axis (0.15) is higher than that (0.1) along the ab plane, according to the ultralow out-of-plane thermal conductivity. The electronic band structure results, which were examined by angle-resolved photoemission spectroscopy (ARPES) predicted the potential of improving the thermoelectric performance of SnSe2 single crystals by electron doping.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; National Research Foundation of Korea (NRF); National Foundation for Science and Technology Development of Vietnam (NAFOSTED); Korea Institute of Science and Technology (KIST) Institutional Program
- Grant/Contract Number:
- AC02-05CH11231; NRF-2019R1F1A1058473; NRF-2019R1A6A1A11053838; NRF-2020K1A4A7A02095438; 2019K1A3A7A09033388; NRF-2020R1A5A1104591; 2018R1A2B6004538; 2020K1A3A7A09080369; 103.02-2019.354; 2E29410
- OSTI ID:
- 1822859
- Journal Information:
- ACS Applied Energy Materials, Vol. 3, Issue 11; ISSN 2574-0962
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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