Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

Peng, Hongyu; Ailihumaer, Tuerxun; Liu, Yafei; Kisslinger, Kim; Tong, Xiao; Raghothamachar, Balaji; Dudley, Michael

doi:10.1007/s11664-021-08832-9

Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

Journal Article · 01 March 2021 · J. Electro. Mater.

DOI:https://doi.org/10.1007/s11664-021-08832-9· OSTI ID:1814979

Peng, Hongyu; Ailihumaer, Tuerxun; Liu, Yafei; Kisslinger, Kim; Tong, Xiao; Raghothamachar, Balaji; Dudley, Michael

Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: DOE - Office Of Science; DOE - BASIC ENERGY SCIENCES

OSTI ID:: 1814979

Journal Information:: J. Electro. Mater., Vol. 50

Country of Publication:: United States

Language:: ENGLISH

References (8)

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High brightness AlGaInP light-emitting diodes Streubel, K.; Linder, N.; Wirth, R. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2 https://doi.org/10.1109/2944.999187	journal	January 2002
Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography Peng, Hongyu; Ailihumaer, Tuerxun; Liu, Yafei Journal of Crystal Growth, Vol. 533 https://doi.org/10.1016/j.jcrysgro.2019.125458	journal	March 2020
Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers Peng, Hongyu; Ailihumaer, Tuerxun; Raghothamachar, Balaji Journal of Electronic Materials, Vol. 49, Issue 6 https://doi.org/10.1007/s11664-020-07981-7	journal	February 2020
Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine Ryu, H. H.; Jeon, M. H.; Leem, J. Y. Journal of Materials Science, Vol. 41, Issue 24 https://doi.org/10.1007/s10853-006-0998-3	journal	October 2006
Use of tertiarybutylphosphine for OMVPE growth of (AlxGa1-x)o.51 In0.49P Cao, D. S.; Stringfellow, G. B. Journal of Electronic Materials, Vol. 20, Issue 1 https://doi.org/10.1007/BF02651971	journal	January 1991
Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer Hiraya, Yoshihiro; Ishizaka, Fumiya; Tomioka, Katsuhiro Applied Physics Express, Vol. 9, Issue 3 https://doi.org/10.7567/APEX.9.035502	journal	February 2016
The measurement of strain fields by X-ray topographic contour mapping Stock, S. R.; Chen, Haydn; Birnbaum, H. K. Philosophical Magazine A, Vol. 53, Issue 1 https://doi.org/10.1080/01418618608242808	journal	January 1986

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