Atomic-precision advanced manufacturing for Si quantum computing

Bussmann, Ezra; Butera, Robert E.; Owen, James G.; Randall, John N.; Rinaldi, Steven M.; Baczewski, Andrew D.; Misra, Shashank

doi:10.1557/s43577-021-00139-8

Atomic-precision advanced manufacturing for Si quantum computing

Journal Article · 03 August 2021 · MRS Bulletin

DOI:https://doi.org/10.1557/s43577-021-00139-8· OSTI ID:1813068

^[1]; Butera, Robert E. ^[2]; Owen, James G. ^[3]; Randall, John N. ^[3]; Rinaldi, Steven M. ^[1]; Baczewski, Andrew D. ^[1]; Misra, Shashank ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Maryland, College Park, MD (United States)
Zyvex Labs, Richardson, TX (United States)

A materials synthesis method that we call atomic-precision advanced manufacturing (APAM), which is the only known route to tailor silicon nanoelectronics with full 3D atomic precision, is making an impact as a powerful prototyping tool for quantum computing. Quantum computing schemes using atomic (³¹P) spin qubits are compelling for future scale-up owing to long dephasing times, one- and two-qubit gates nearing high-fidelity thresholds for fault-tolerant quantum error correction, and emerging routes to manufacturing via proven Si foundry techniques. Multiqubit devices are challenging to fabricate by conventional means owing to tight interqubit pitches forced by short-range spin interactions, and APAM offers the required (Å-scale) precision to systematically investigate solutions. However, applying APAM to fabricate circuitry with increasing numbers of qubits will require significant technique development. Here, we provide a tutorial on APAM techniques and materials and highlight its impacts in quantum computing research. Finally, we describe challenges on the path to multiqubit architectures and opportunities for APAM technique development.

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Research Organization:: Zyvex Labs, LLC, Richardson, TX (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: EE0008311; 217013; NA0003525

OSTI ID:: 1813068

Alternate ID(s):: OSTI ID: 1817714; OSTI ID: 1842455

Report Number(s):: SAND-2021-9623J; 217013

Journal Information:: MRS Bulletin, Vol. 46, Issue 7; ISSN 0883-7694

Publisher:: Materials Research SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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