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Title: Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

Abstract

Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley–Read–Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley–Read–Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 μs due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice nBn could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley–Read–Hall limited at 0.5 μs, which shows promise for detector applications.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [2];  [3];  [4];  [4];  [4]; ORCiD logo [4];  [4]; ORCiD logo [2]; ORCiD logo [5]; ORCiD logo [5];  [2]
  1. Air Force Research Lab. (AFRL), Kirtland AFB, NM (United States). Space Vehicles Directorate; Applied Technology Associates, Albuquerque, NM (United States); New Mexico State Univ., Las Cruces, NM (United States). Dept. of Physics
  2. Air Force Research Lab. (AFRL), Kirtland AFB, NM (United States). Space Vehicles Directorate
  3. Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  5. Arizona State Univ., Tempe, AZ (United States). Center for Photonics Innovation and School of Electrical, Computer, and Energy Engineering
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE; Air Force Research Laboratory (AFRL)
OSTI Identifier:
1810399
Report Number(s):
SAND-2021-5669J
Journal ID: ISSN 0021-8979; 697278
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 129; Journal Issue: 18; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Carrasco, Rigo A., Morath, Christian P., Grant, Perry C., Ariyawansa, Gamini, Stephenson, Chad A., Kadlec, Clark N., Hawkins, Samuel D., Klem, John F., Shaner, Eric A., Steenbergen, Elizabeth H., Schaefer, Stephen T., Johnson, Shane R., and Webster, Preston T. Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices. United States: N. p., 2021. Web. doi:10.1063/5.0047178.
Carrasco, Rigo A., Morath, Christian P., Grant, Perry C., Ariyawansa, Gamini, Stephenson, Chad A., Kadlec, Clark N., Hawkins, Samuel D., Klem, John F., Shaner, Eric A., Steenbergen, Elizabeth H., Schaefer, Stephen T., Johnson, Shane R., & Webster, Preston T. Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices. United States. https://doi.org/10.1063/5.0047178
Carrasco, Rigo A., Morath, Christian P., Grant, Perry C., Ariyawansa, Gamini, Stephenson, Chad A., Kadlec, Clark N., Hawkins, Samuel D., Klem, John F., Shaner, Eric A., Steenbergen, Elizabeth H., Schaefer, Stephen T., Johnson, Shane R., and Webster, Preston T. 2021. "Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices". United States. https://doi.org/10.1063/5.0047178.
@article{osti_1810399,
title = {Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices},
author = {Carrasco, Rigo A. and Morath, Christian P. and Grant, Perry C. and Ariyawansa, Gamini and Stephenson, Chad A. and Kadlec, Clark N. and Hawkins, Samuel D. and Klem, John F. and Shaner, Eric A. and Steenbergen, Elizabeth H. and Schaefer, Stephen T. and Johnson, Shane R. and Webster, Preston T.},
abstractNote = {Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley–Read–Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley–Read–Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 μs due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice nBn could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley–Read–Hall limited at 0.5 μs, which shows promise for detector applications.},
doi = {10.1063/5.0047178},
url = {https://www.osti.gov/biblio/1810399}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 18,
volume = 129,
place = {United States},
year = {2021},
month = {5}
}

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