Two-terminal electronic charge resistance switching device

Patent · 16 March 2021

OSTI ID:1805639

Marinella, Matthew; Agarwal, Sandeep

A two-terminal memory device and methods for its use are provided. In the device, a bottom electrode is electrically continuous with a first operating terminal, and a control gate electrode is electrically continuous with a second operating terminal. A stack of insulator layers comprising a hopping conduction layer and a tunnel layer is contactingly interposed between the bottom electrode and the control gate electrode. The tunnel layer is thinner than the hopping conduction layer, and it has a wider bandgap than the hopping conduction layer. The hopping conduction layer consists of a material that supports electron hopping transport.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: NA0003525
• Assignee: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
• Patent Number(s): 10,950,790
• Application Number: 16/798,723
• OSTI ID: 1805639
• Country of Publication: United States
• Language: English