skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of fabricating photosensitive devices with reduced process-temperature budget

Abstract

A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.

Inventors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1805476
Patent Number(s):
10,910,508
Application Number:
16/401,821
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 05/02/2019
Country of Publication:
United States
Language:
English

Citation Formats

Kay, Randolph R., Mani, Seethambal S., Pomerene, Andrew T. S., Starbuck, Andrew Lea, Brock, Reinhard, Trotter, Douglas Chandler, and Jones, Adam. Method of fabricating photosensitive devices with reduced process-temperature budget. United States: N. p., 2021. Web.
Kay, Randolph R., Mani, Seethambal S., Pomerene, Andrew T. S., Starbuck, Andrew Lea, Brock, Reinhard, Trotter, Douglas Chandler, & Jones, Adam. Method of fabricating photosensitive devices with reduced process-temperature budget. United States.
Kay, Randolph R., Mani, Seethambal S., Pomerene, Andrew T. S., Starbuck, Andrew Lea, Brock, Reinhard, Trotter, Douglas Chandler, and Jones, Adam. 2021. "Method of fabricating photosensitive devices with reduced process-temperature budget". United States. https://www.osti.gov/servlets/purl/1805476.
@article{osti_1805476,
title = {Method of fabricating photosensitive devices with reduced process-temperature budget},
author = {Kay, Randolph R. and Mani, Seethambal S. and Pomerene, Andrew T. S. and Starbuck, Andrew Lea and Brock, Reinhard and Trotter, Douglas Chandler and Jones, Adam},
abstractNote = {A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.},
doi = {},
url = {https://www.osti.gov/biblio/1805476}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {2}
}

Works referenced in this record:

Method for producing a thin distributed photodiode structure
patent, April 2003


Focal plane array with modular pixel array components for scalability
patent, December 2014