Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon

Buffolo, Matteo; Samparisi, Fabio; Rovere, Lorenzo; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

doi:10.1109/jstqe.2019.2939519

Title: Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon

Journal Article · Wed Sep 04 00:00:00 EDT 2019 · IEEE Journal of Selected Topics in Quantum Electronics

DOI:https://doi.org/10.1109/jstqe.2019.2939519· OSTI ID:1803986

^[1]; Samparisi, Fabio ^[1];

^[1]; De Santi, Carlo ^[1]; Jung, Daehwan ^[2];

^[3];

^[3]; Herrick, Robert W. ^[4];

^[1];

^[1]; Meneghini, Matteo ^[1]

Univ. of Padova (Italy)
Korea Inst. of Science and Technology, Seoul (Korea, Republic of)
Univ. of California, Santa Barbara, CA (United States)
Intel Corporation, Santa Clara, CA (United States)

This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechanisms responsible for the optical degradation. More specifically, the samples (i) exhibited a gradual increase in threshold current, well correlated with (ii) a decrease in sub-threshold emission, and (iii) a decrease in slope efficiency. These variations were found to be compatible with a diffusion process involving the propagation of defects toward the active region of the device and the subsequent decrease in injection efficiency. This hypothesis was also supported by the increase in the defect-related current conduction components exhibited by the electrical characteristics, and highlights the role of defects in the gradual degradation of InAs quantum dot laser diodes. Electroluminescence measurements were used to provide further insight in the degradation process.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000671

OSTI ID:: 1803986

Journal Information:: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 26, Issue 2; ISSN 1077-260X

Publisher:: IEEE Lasers and Electro-optics SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (17)

Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si Jung, Daehwan; Herrick, Robert; Norman, Justin Applied Physics Letters, Vol. 112, Issue 15 https://doi.org/10.1063/1.5026147	journal	April 2018
High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si Jung, Daehwan; Norman, Justin; Kennedy, M. J. Applied Physics Letters, Vol. 111, Issue 12 https://doi.org/10.1063/1.4993226	journal	September 2017
Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers Buffolo, Matteo; Samparisi, Fabio; De Santi, Carlo IEEE Journal of Quantum Electronics, Vol. 55, Issue 3 https://doi.org/10.1109/JQE.2019.2909963	journal	June 2019
Diode Lasers and Photonic Integrated Circuits Coldren, Larry A.; Corzine, Scott W.; Mašanović, Milan L. John Wiley & Sons, Inc. https://doi.org/10.1002/9781118148167	book	January 2012
The differential efficiency of quantum-well lasers Smowton, P. M.; Blood, P. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3, Issue 2 https://doi.org/10.1109/2944.605699	journal	April 1997
Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes Orita, Kenji; Meneghini, Matteo; Ohno, Hiroshi IEEE Journal of Quantum Electronics, Vol. 48, Issue 9 https://doi.org/10.1109/JQE.2012.2203795	journal	September 2012
A new recombination model for device simulation including tunneling Hurkx, G. A. M.; Klaassen, D. B. M.; Knuvers, M. P. G. IEEE Transactions on Electron Devices, Vol. 39, Issue 2 https://doi.org/10.1109/16.121690	journal	January 1992
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs De Santi, Carlo; Buffolo, Matteo; Renso, Nicola Applied Physics Express, Vol. 12, Issue 5 https://doi.org/10.7567/1882-0786/ab10e3	journal	April 2019
Phonon-assisted tunneling in direct-bandgap semiconductors Mohammed, Mazharuddin; Verhulst, Anne S.; Verreck, Devin Journal of Applied Physics, Vol. 125, Issue 1 https://doi.org/10.1063/1.5044256	journal	January 2019
Phonon assisted tunnel emission of electrons from deep levels in GaAs Pons, D.; Makram-Ebeid, S. Journal de Physique, Vol. 40, Issue 12 https://doi.org/10.1051/jphys:0197900400120116100	journal	January 1979
1.3- $\mu$ m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon Duan, Jianan; Huang, Heming; Dong, Bozhang IEEE Photonics Technology Letters, Vol. 31, Issue 5 https://doi.org/10.1109/LPT.2019.2895049	journal	March 2019
Electrically pumped continuous-wave 13 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si Liu, Alan Y.; Peters, Jon; Huang, Xue Optics Letters, Vol. 42, Issue 2 https://doi.org/10.1364/OL.42.000338	journal	January 2017
Structural analysis of life tested 1.3 μm quantum dot lasers Beanland, R.; Sánchez, A. M.; Childs, D. Journal of Applied Physics, Vol. 103, Issue 1 https://doi.org/10.1063/1.2827451	journal	January 2008
High-Performance Photonic Integrated Circuits on Silicon Helkey, Roger; Saleh, Adel A. M.; Buckwalter, Jim IEEE Journal of Selected Topics in Quantum Electronics, Vol. 25, Issue 5 https://doi.org/10.1109/JSTQE.2019.2903775	journal	September 2019
Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon Huang, Heming; Duan, Jianan; Jung, Daehwan Journal of the Optical Society of America B, Vol. 35, Issue 11 https://doi.org/10.1364/JOSAB.35.002780	journal	January 2018
Role of defects in the thermal droop of InGaN-based light emitting diodes De Santi, C.; Meneghini, M.; La Grassa, M. Journal of Applied Physics, Vol. 119, Issue 9 https://doi.org/10.1063/1.4942438	journal	March 2016
Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers Harris, L.; Mowbray, D. J.; Skolnick, M. S. Applied Physics Letters, Vol. 73, Issue 7 https://doi.org/10.1063/1.122055	journal	August 1998

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Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback Huang, H.; Duan, J.; Dong, B. APL Photonics, Vol. 5, Issue 1 https://doi.org/10.1063/1.5120029	journal	January 2020

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