Homoepitaxial growth of 9,10-diphenylanthracene

Chen, Pei; Lunt, Richard R.

doi:10.1016/j.jcrysgro.2020.125771

Title: Homoepitaxial growth of 9,10-diphenylanthracene

Journal Article · Wed Jun 17 00:00:00 EDT 2020 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2020.125771· OSTI ID:1802115

Chen, Pei ^[1]; Lunt, Richard R. ^[1]

Michigan State Univ., East Lansing, MI (United States)

Organic single crystals are often shown to have significantly improved optoelectronic properties over polycrystalline thin films such as exciton diffusivity and carrier mobility. There is growing interest in incorporating such crystals in organic electronics despite a number of challenges. In this work, the homoepitaxial vapor phase growth modes for 9,10-diphenylanthracene (DPA) homoepitaxy are mapped as a function of growth rate and temperature using in situ ultra-low current reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), and atomic force microscopy (AFM). Vapor phase deposition was performed on free-standing single crystal DPA substrates, which show clear Kikuchi patterns. At room temperature, a transition from Frank-Van der Merwe layer-by-layer growth to step-flow growth is observed as the deposition rate is decreased, while at lower temperatures a Stranski-Krastanov layer-plus-island growth is observed. This is the first demonstration of true step-flow growth from room temperature vapor phase deposition for organic semiconductors and is reminiscent of traditional semiconductor growth regimes. Accordingly, these results could lead to improved control over growth and doping of organic single crystals, and lead to enhanced single crystal organic optoelectronic applications.

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Research Organization:: Michigan State Univ., East Lansing, MI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0010472

OSTI ID:: 1802115

Alternate ID(s):: OSTI ID: 1635142

Journal Information:: Journal of Crystal Growth, Vol. 546; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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References (34)

Homoepitaxy of Crystalline Rubrene Thin Films Fusella, Michael A.; Schreiber, Frank; Abbasi, Kevin Nano Letters, Vol. 17, Issue 5 https://doi.org/10.1021/acs.nanolett.7b00380	journal	April 2017
Organic light-emitting diodes containing multilayers of organic single crystals Nakanotani, Hajime; Adachi, Chihaya Applied Physics Letters, Vol. 96, Issue 5 https://doi.org/10.1063/1.3298558	journal	February 2010
Homoepitaxy Growth of Well-Ordered Rubrene Thin Films Zeng, Xionghui; Wang, Liduo; Duan, Lian Crystal Growth & Design, Vol. 8, Issue 5 https://doi.org/10.1021/cg701046h	journal	April 2008
Highly ordered structures and submolecular scanning tunnelling microscopy contrast of PTCDA and DM-PBDCI monolayers on Ag(111) and Ag(110) Glöckler, K.; Seidel, C.; Soukopp, A. Surface Science, Vol. 405, Issue 1 https://doi.org/10.1016/S0039-6028(97)00888-1	journal	May 1998
Growth and Electronic Transport in 9,10-Diphenylanthracene Single Crystals—An Organic Semiconductor of High Electron and Hole Mobility Tripathi, A. K.; Heinrich, M.; Siegrist, T. Advanced Materials, Vol. 19, Issue 16 https://doi.org/10.1002/adma.200602162	journal	August 2007
RED intensity oscillations during MBE of GaAs Wood, Colin E. C. Surface Science, Vol. 108, Issue 2 https://doi.org/10.1016/0039-6028(81)90439-8	journal	July 1981
Oxidation of Crystalline Rubrene Films: Evidence of an Epitaxial Native Oxide Layer Raimondo, Luisa; Trabattoni, Silvia; Moret, Massimo Advanced Materials Interfaces, Vol. 4, Issue 23 https://doi.org/10.1002/admi.201700670	journal	September 2017
Molecular structure of the substrate-induced thin-film phase of tetracene Pithan, Linus; Nabok, Dmitrii; Cocchi, Caterina The Journal of Chemical Physics, Vol. 149, Issue 14 https://doi.org/10.1063/1.5043379	journal	October 2018
Growth and structure of pentacene films on graphite: Weak adhesion as a key for epitaxial film growth Götzen, Jan; Käfer, Daniel; Wöll, Christof Physical Review B, Vol. 81, Issue 8 https://doi.org/10.1103/PhysRevB.81.085440	journal	February 2010
High mobility emissive organic semiconductor Liu, Jie; Zhang, Hantang; Dong, Huanli Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms10032	journal	December 2015
Kinetic Phase Selection of Rubrene Heteroepitaxial Domains Campione, Marcello; Moret, Massimo; Raimondo, Luisa The Journal of Physical Chemistry C, Vol. 113, Issue 49 https://doi.org/10.1021/jp905752r	journal	August 2009
Organic electroluminescent diodes Tang, C. W.; VanSlyke, S. A. Applied Physics Letters, Vol. 51, Issue 12 https://doi.org/10.1063/1.98799	journal	September 1987
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques Forrest, Stephen R. Chemical Reviews, Vol. 97, Issue 6 https://doi.org/10.1021/cr941014o	journal	October 1997
Efficient photodiodes from interpenetrating polymer networks Halls, J. J. M.; Walsh, C. A.; Greenham, N. C. Nature, Vol. 376, Issue 6540, p. 498-500 https://doi.org/10.1038/376498a0	journal	August 1995
Two‐layer organic photovoltaic cell Tang, C. W. Applied Physics Letters, Vol. 48, Issue 2 https://doi.org/10.1063/1.96937	journal	January 1986
Organic Semiconducting Oligomers for Use in Thin Film Transistors Murphy, Amanda R.; Fréchet, Jean M. J. Chemical Reviews, Vol. 107, Issue 4 https://doi.org/10.1021/cr0501386	journal	April 2007
Homoepitaxial Growth of Metal Halide Crystals Investigated by Reflection High-Energy Electron Diffraction Chen, Pei; Kuttipillai, Padmanaban S.; Wang, Lili Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep40542	journal	January 2017
Temperature-dependent morphology and structure of ordered 3,4,9,10-perylene-tetracarboxylicacid-dianhydride (PTCDA) thin films on Ag(1 1 1) Chkoda, L.; Schneider, M.; Shklover, V. Chemical Physics Letters, Vol. 371, Issue 5-6 https://doi.org/10.1016/S0009-2614(03)00297-5	journal	April 2003
When TTF met TCNQ Kirtley, John R.; Mannhart, Jochen Nature Materials, Vol. 7, Issue 7 https://doi.org/10.1038/nmat2211	journal	June 2008
Substrate Selection for Full Exploitation of Organic Semiconductor Films: Epitaxial Rubrene on β-Alanine Single Crystals Trabattoni, Silvia; Raimondo, Luisa; Campione, Marcello Advanced Materials Interfaces, Vol. 2, Issue 18 https://doi.org/10.1002/admi.201500423	journal	October 2015
Strategies for two-dimensional growth of organic molecular films Sassella, A.; Campione, M.; Papagni, A. Chemical Physics, Vol. 325, Issue 1 https://doi.org/10.1016/j.chemphys.2005.12.008	journal	June 2006
Direct observation of the epitaxial growth of molecular layers on molecular single crystals Sassella, A.; Borghesi, A.; Campione, M. Applied Physics Letters, Vol. 89, Issue 26 https://doi.org/10.1063/1.2423322	journal	December 2006
Anisotropic Crystalline Organic Step-Flow Growth on Deactivated Si Surfaces Wagner, Sean R.; Lunt, Richard R.; Zhang, Pengpeng Physical Review Letters, Vol. 110, Issue 8 https://doi.org/10.1103/PhysRevLett.110.086107	journal	February 2013
Epitaxial Stabilization of Tetragonal Cesium Tin Iodide Wang, Lili; Chen, Pei; Kuttipillai, Padmanaban S. ACS Applied Materials & Interfaces, Vol. 11, Issue 35 https://doi.org/10.1021/acsami.9b05592	journal	June 2019
Epitaxial Growth of an Organic p–n Heterojunction: C ₆₀ on Single-Crystal Pentacene Nakayama, Yasuo; Mizuno, Yuta; Hosokai, Takuya ACS Applied Materials & Interfaces, Vol. 8, Issue 21 https://doi.org/10.1021/acsami.6b02744	journal	May 2016
Measurement of the Mean Inner Potentials of Anthracene and Naphthalene Lunt, Richard R.; Kéna-Cohen, Stéphane; Benziger, Jay B. Physical Review Letters, Vol. 102, Issue 6 https://doi.org/10.1103/PhysRevLett.102.065504	journal	February 2009
Substrate-interaction, long-range order, and epitaxy of large organic adsorbates Umbach, E.; Sokolowski, M.; Fink, R. Applied Physics A Materials Science and Processing, Vol. 63, Issue 6 https://doi.org/10.1007/BF01567212	journal	December 1996
Theoretical limits for visibly transparent photovoltaics Lunt, Richard R. Applied Physics Letters, Vol. 101, Issue 4 https://doi.org/10.1063/1.4738896	journal	July 2012
Evolution of quasi‐epitaxial growth of a crystalline organic semiconductor on graphite Haskal, Eliav I.; So, Franky F.; Burrows, Paul E. Applied Physics Letters, Vol. 60, Issue 26 https://doi.org/10.1063/1.106700	journal	June 1992
Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth Sakamoto, T.; Kawai, N. J.; Nakagawa, T. Applied Physics Letters, Vol. 47, Issue 6 https://doi.org/10.1063/1.96091	journal	September 1985
Dynamics of film growth of GaAs by MBE from Rheed observations Neave, J. H.; Joyce, B. A.; Dobson, P. J. Applied Physics A Solids and Surfaces, Vol. 31, Issue 1 https://doi.org/10.1007/BF00617180	journal	May 1983
Organic Heterostructure Field-Effect Transistors Dodabalapur, A.; Katz, H. E.; Torsi, L. Science, Vol. 269, Issue 5230 https://doi.org/10.1126/science.269.5230.1560	journal	September 1995
Field-effect transistors on rubrene single crystals with parylene gate insulator Podzorov, V.; Pudalov, V. M.; Gershenson, M. E. Applied Physics Letters, Vol. 82, Issue 11 https://doi.org/10.1063/1.1560869	journal	March 2003
Growth of large naphthalene and anthracene single-crystal sheets at the liquid–air interface Postnikov, V. A.; Chertopalov, S. V. Crystallography Reports, Vol. 60, Issue 4 https://doi.org/10.1134/S106377451503013X	journal	July 2015

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