Amorphous to Crystal Phase Change Memory Effect with Two-Fold Bandgap Difference in Semiconducting K

Islam, Saiful M.; Sangwan, Vinod K.; Buchholz, D. Bruce; Wells, Spencer A.; Peng, Lintao; Zeng, Li; He, Yihui; Hersam, Mark C.; Ketterson, John B.; Marks, Tobin J.; Bedzyk, Michael J.; Grayson, Matthew; Kanatzidis, Mercouri G.

doi:10.1021/jacs.1c01484

Amorphous to Crystal Phase Change Memory Effect with Two-Fold Bandgap Difference in Semiconducting K

Journal Article · 01 April 2021 · J. Am. Chem. Soc.

DOI:https://doi.org/10.1021/jacs.1c01484· OSTI ID:1784980

Islam, Saiful M.; Sangwan, Vinod K.; Buchholz, D. Bruce; Wells, Spencer A.; Peng, Lintao; Zeng, Li; He, Yihui; Hersam, Mark C.; Ketterson, John B.; Marks, Tobin J.; Bedzyk, Michael J.; Grayson, Matthew; Kanatzidis, Mercouri G.

Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: DOE - Office Of Science; National Science Foundation (NSF)

OSTI ID:: 1784980

Journal Information:: J. Am. Chem. Soc., Vol. 143, Issue (16)

Country of Publication:: United States

Language:: ENGLISH

References (49)

Phase-change materials for rewriteable data storage Wuttig, Matthias; Yamada, Noboru Nature Materials, Vol. 6, Issue 11 https://doi.org/10.1038/nmat2009	journal	November 2007
Unravelling the interplay of local structure and physical properties in phase-change materials Wełnic, Wojciech; Pamungkas, Ariesto; Detemple, Ralf Nature Materials, Vol. 5, Issue 1 https://doi.org/10.1038/nmat1539	journal	December 2005
The role of vacancies and local distortions in the design of new phase-change materials Wuttig, Matthias; Lüsebrink, Daniel; Wamwangi, Daniel Nature Materials, Vol. 6, Issue 2 https://doi.org/10.1038/nmat1807	journal	December 2006
Resonant bonding in crystalline phase-change materials Shportko, Kostiantyn; Kremers, Stephan; Woda, Michael Nature Materials, Vol. 7, Issue 8 https://doi.org/10.1038/nmat2226	journal	July 2008
Overview of the Role of Alloying Modifiers on the Performance of Phase Change Memory Materials Kang, Lei; Chen, Leng Journal of Electronic Materials, Vol. 50, Issue 1 https://doi.org/10.1007/s11664-020-08590-0	journal	November 2020
Unveiling the structural origin to control resistance drift in phase-change memory materials Zhang, Wei; Ma, Evan Materials Today, Vol. 41 https://doi.org/10.1016/j.mattod.2020.07.016	journal	December 2020
Designing optical media of the future Jedema, Friso Nature Materials, Vol. 6, Issue 2 https://doi.org/10.1038/nmat1832	journal	February 2007
Understanding the phase-change mechanism of rewritable optical media Kolobov, Alexander V.; Fons, Paul; Frenkel, Anatoly I. Nature Materials, Vol. 3, Issue 10 https://doi.org/10.1038/nmat1215	journal	September 2004
Unique Bond Breaking in Crystalline Phase Change Materials and the Quest for Metavalent Bonding Zhu, Min; Cojocaru-Mirédin, Oana; Mio, Antonio M. Advanced Materials, Vol. 30, Issue 18 https://doi.org/10.1002/adma.201706735	journal	March 2018
Multistates and Polyamorphism in Phase-Change K ₂ Sb ₈ Se ₁₃ Islam, Saiful M.; Peng, Lintao; Zeng, Li Journal of the American Chemical Society, Vol. 140, Issue 29 https://doi.org/10.1021/jacs.8b05542	journal	June 2018
Projected phase-change memory devices Koelmans, Wabe W.; Sebastian, Abu; Jonnalagadda, Vara Prasad Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9181	journal	September 2015
Phase Change Materials and Their Application to Nonvolatile Memories Raoux, Simone; Wełnic, Wojciech; Ielmini, Daniele Chemical Reviews, Vol. 110, Issue 1 https://doi.org/10.1021/cr900040x	journal	August 2009
Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology Hudgens, S.; Johnson, B. MRS Bulletin, Vol. 29, Issue 11 https://doi.org/10.1557/mrs2004.236	journal	November 2004
Phase-change random access memory: A scalable technology Raoux, S.; Burr, G. W.; Breitwisch, M. J. IBM Journal of Research and Development, Vol. 52, Issue 4.5 https://doi.org/10.1147/rd.524.0465	journal	July 2008
A polymer/semiconductor write-once read-many-times memory Möller, Sven; Perlov, Craig; Jackson, Warren Nature, Vol. 426, Issue 6963 https://doi.org/10.1038/nature02070	journal	November 2003
The application of amorphous materials to computer memories Neale, R. G.; Aseltine, J. A. IEEE Transactions on Electron Devices, Vol. 20, Issue 2 https://doi.org/10.1109/T-ED.1973.17628	journal	February 1973
An optoelectronic framework enabled by low-dimensional phase-change films Hosseini, Peiman; Wright, C. David; Bhaskaran, Harish Nature, Vol. 511, Issue 7508 https://doi.org/10.1038/nature13487	journal	July 2014
Reversible Electrical Switching Phenomena in Disordered Structures Ovshinsky, Stanford R. Physical Review Letters, Vol. 21, Issue 20 https://doi.org/10.1103/PhysRevLett.21.1450	journal	November 1968
Switching properties of thin Nio films Gibbons, J. F.; Beadle, W. E. Solid-State Electronics, Vol. 7, Issue 11 https://doi.org/10.1016/0038-1101(64)90131-5	journal	November 1964
Metal-semiconductor transition in electroformed chromium/amorphous silicon/vanadium thin-film structures Hajto, J.; Snell, A. J.; Hu, J. Philosophical Magazine B, Vol. 69, Issue 2 https://doi.org/10.1080/01418639408240106	journal	February 1994
A map for phase-change materials Lencer, Dominic; Salinga, Martin; Grabowski, Blazej Nature Materials, Vol. 7, Issue 12 https://doi.org/10.1038/nmat2330	journal	November 2008
Low-cost and nanoscale non-volatile memory concept for future silicon chips Lankhorst, Martijn H. R.; Ketelaars, Bas W. S. M. M.; Wolters, R. A. M. Nature Materials, Vol. 4, Issue 4 https://doi.org/10.1038/nmat1350	journal	March 2005
Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys Luckas, J.; Piarristeguy, A.; Bruns, G. Journal of Applied Physics, Vol. 113, Issue 2 https://doi.org/10.1063/1.4769871	journal	January 2013
Electronic and optical switching of solution-phase deposited SnSe ₂ phase change memory material Wang, Robert Y.; Caldwell, Marissa A.; Jeyasingh, Rakesh Gnana David Journal of Applied Physics, Vol. 109, Issue 11 https://doi.org/10.1063/1.3587187	journal	June 2011
Multilevel-Cell Phase-Change Memory: A Viable Technology Athmanathan, Aravinthan; Stanisavljevic, Milos; Papandreou, Nikolaos IEEE Journal on Emerging and Selected Topics in Circuits and Systems, Vol. 6, Issue 1 https://doi.org/10.1109/JETCAS.2016.2528598	journal	March 2016
Relation between bandgap and resistance drift in amorphous phase change materials Rütten, Martin; Kaes, Matthias; Albert, Andreas Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep17362	journal	December 2015
Bipolar switching in chalcogenide phase change memory Ciocchini, N.; Laudato, M.; Boniardi, M. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep29162	journal	July 2016
Polyamorphism in K ₂ Sb ₈ Se ₁₃ for multi-level phase-change memory Xu, Meng; Qiao, Chong; Xue, Kan-Hao Journal of Materials Chemistry C, Vol. 8, Issue 19 https://doi.org/10.1039/D0TC01089H	journal	January 2020
High Thermopower and Low Thermal Conductivity in Semiconducting Ternary K−Bi−Se Compounds. Synthesis and Properties of β-K ₂ Bi ₈ Se ₁₃ and K _2.5 Bi _8.5 Se ₁₄ and Their Sb Analogues Chung, Duck-Young; Choi, Kyoung-Shin; Iordanidis, Lykourgos Chemistry of Materials, Vol. 9, Issue 12 https://doi.org/10.1021/cm970397e	journal	December 1997
Multiple Converged Conduction Bands in K ₂ Bi ₈ Se ₁₃ : A Promising Thermoelectric Material with Extremely Low Thermal Conductivity Pei, Yanling; Chang, Cheng; Wang, Zhe Journal of the American Chemical Society, Vol. 138, Issue 50 https://doi.org/10.1021/jacs.6b09568	journal	December 2016
Seebeck and thermal conductivity analysis in amorphous/crystalline β -K ₂ Bi ₈ Se ₁₃ nanocomposite materials Kyratsi, Th.; Hatzikraniotis, E.; Ioannou, M. Journal of Applied Physics, Vol. 110, Issue 3 https://doi.org/10.1063/1.3610393	journal	August 2011
Thermoelectric Properties of Hot-Pressed β-K2Bi8Se13−x S x Materials Kyratsi, Theodora; Ioannou, Maria Journal of Electronic Materials, Vol. 42, Issue 7 https://doi.org/10.1007/s11664-012-2331-z	journal	November 2012
Nika : software for two-dimensional data reduction Ilavsky, Jan Journal of Applied Crystallography, Vol. 45, Issue 2 https://doi.org/10.1107/S0021889812004037	journal	March 2012
Direct Gap Semiconductors Pb ₂ BiS ₂ I ₃ , Sn ₂ BiS ₂ I ₃ , and Sn ₂ BiSI ₅ Islam, Saiful M.; Malliakas, Christos D.; Sarma, Debajit Chemistry of Materials, Vol. 28, Issue 20 https://doi.org/10.1021/acs.chemmater.6b02691	journal	October 2016
K _2x Sn _4−x S _8−x (x = 0.65–1): a new metal sulfide for rapid and selective removal of Cs ⁺ , Sr ²⁺ and UO ₂ ²⁺ ions Sarma, Debajit; Malliakas, Christos D.; Subrahmanyam, K. S. Chemical Science, Vol. 7, Issue 2 https://doi.org/10.1039/C5SC03040D	journal	January 2016
Reversible switching in phase-change materials Wełnic, Wojciech; Wuttig, Matthias Materials Today, Vol. 11, Issue 6 https://doi.org/10.1016/S1369-7021(08)70118-4	journal	June 2008
Calorimetric measurements of structural relaxation and glass transition temperatures in sputtered films of amorphous Te alloys used for phase change recording Kalb, J. A.; Wuttig, M.; Spaepen, F. Journal of Materials Research, Vol. 22, Issue 3 https://doi.org/10.1557/jmr.2007.0103	journal	March 2007
Classical-nucleation-theory analysis of priming in chalcogenide phase-change memory Orava, Jiri; Greer, A. Lindsay Acta Materialia, Vol. 139 https://doi.org/10.1016/j.actamat.2017.08.013	journal	October 2017
Characterization of supercooled liquid Ge2Sb2Te5 and its crystallization by ultrafast-heating calorimetry Orava, J.; Greer, A. L.; Gholipour, B. Nature Materials, Vol. 11, Issue 4 https://doi.org/10.1038/nmat3275	journal	March 2012
Fragile-to-Strong Crossover in Supercooled Liquid Ag-In-Sb-Te Studied by Ultrafast Calorimetry Orava, Jiri; Hewak, Daniel W.; Greer, A. Lindsay Advanced Functional Materials, Vol. 25, Issue 30 https://doi.org/10.1002/adfm.201501607	journal	July 2015
Kinetics of crystal nucleation in undercooled droplets of Sb- and Te-based alloys used for phase change recording Kalb, J. A.; Spaepen, F.; Wuttig, M. Journal of Applied Physics, Vol. 98, Issue 5 https://doi.org/10.1063/1.2037870	journal	September 2005
Threshold field of phase change memory materials measured using phase change bridge devices Krebs, Daniel; Raoux, Simone; Rettner, Charles T. Applied Physics Letters, Vol. 95, Issue 8 https://doi.org/10.1063/1.3210792	journal	August 2009
Low‐Temperature Transport in Crystalline Ge ₁ Sb ₂ Te ₄ Volker, Hanno; Jost, Peter; Wuttig, Matthias Advanced Functional Materials, Vol. 25, Issue 40 https://doi.org/10.1002/adfm.201500830	journal	June 2015
Ultralow Thermal Conductivity and High-Temperature Thermoelectric Performance in n-Type K _2.5 Bi _8.5 Se ₁₄ Luo, Zhong-Zhen; Cai, Songting; Hao, Shiqiang Chemistry of Materials, Vol. 31, Issue 15 https://doi.org/10.1021/acs.chemmater.9b02327	journal	July 2019
Ultralow Thermal Conductivity and Thermoelectric Properties of Rb ₂ Bi ₈ Se ₁₃ Cai, Songting; Hao, Shiqiang; Luo, Yubo Chemistry of Materials, Vol. 32, Issue 8 https://doi.org/10.1021/acs.chemmater.0c00703	journal	March 2020
A ₂ Bi ₈ Se ₁₃ (A = Rb, Cs), CsBi _3.67 Se ₆ , and BaBi ₂ Se ₄ : New Ternary Semiconducting Bismuth Selenides Iordanidis, Lykourgos; Brazis, Paul W.; Kyratsi, Theodora Chemistry of Materials, Vol. 13, Issue 2 https://doi.org/10.1021/cm000734a	journal	January 2001
Sb and Se Substitution in CsBi ₄ Te ₆ : The Semiconductors CsM ₄ Q ₆ (M = Bi, Sb; Q = Te, Se), Cs ₂ Bi ₁₀ Q ₁₅ , and CsBi ₅ Q ₈ Chung, Duck Young; Uher, Ctirad; Kanatzidis, Mercouri G. Chemistry of Materials, Vol. 24, Issue 10 https://doi.org/10.1021/cm300490v	journal	May 2012
Impressive Structural Diversity and Polymorphism in the Modular Compounds ABi ₃ Q ₅ (A = Rb, Cs; Q = S, Se, Te) Iordanidis, Lykourgos; Bilc, Daniel; Mahanti, Subhendra D. Journal of the American Chemical Society, Vol. 125, Issue 45 https://doi.org/10.1021/ja034196p	journal	November 2003
A new chalcogenide homologous series A2[M5+nSe9+n] (A = Rb, Cs; M = Bi, Ag, Cd) Kim, Jun-Ho; Chung, Duck-Young; Kanatzidis, Mercouri G. Chemical Communications, Issue 15 https://doi.org/10.1039/b516790f	journal	January 2006

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