X-ray characterization of anisotropic defect formation in SiC under irradiation with applied stress

Koyanagi, T; Sprouster, D.; Snead, L.; Katoh, Y.

doi:10.1016/j.scriptamat.2021.113785

X-ray characterization of anisotropic defect formation in SiC under irradiation with applied stress

Journal Article · 01 January 2022 · Scripta Materialia

DOI:https://doi.org/10.1016/j.scriptamat.2021.113785· OSTI ID:1783465

Koyanagi, T; Sprouster, D.; Snead, L.; Katoh, Y.

Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: ~OTHER

DOE Contract Number:: SC0012704

OSTI ID:: 1783465

Report Number(s):: BNL-221413-2021-JACI

Journal Information:: Scripta Materialia, Vol. 197

Country of Publication:: United States

Language:: English

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