Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells

Conference · Sun Jun 14 00:00:00 EDT 2020 · 2020 47th IEEE Photovoltaic Specialists Conference (PVSC)

DOI:https://doi.org/10.1109/pvsc45281.2020.9300915· OSTI ID:1772432

Kuciauskas, Darius; Albin, David; Moseley, John; Li, Siming; Acajev, Patrik; Reich, Carey; Munshi, Amit H.; Danielson, Adam; Sampath, Walajabad; Lee, Chungho

We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSe x Te 1-x , leading to microsecond charge carrier lifetimes. In undoped Al 2 O 3 -passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm 2 /(Vs), and diffusion length 14 μm. In solar cells measured lifetimes can exceed 1 μs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <; 100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding “recombination lifetime” limitation and in the near future will transition to improving other aspects of device design.

• Research Organization: Arizona State Univ., Tempe, AZ (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: EE0008552
• OSTI ID: 1772432
• Journal Information: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), Conference: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
• Country of Publication: United States
• Language: English