Fast topological switch using strained Weyl semimetals
Patent
·
OSTI ID:1771718
A method of operating a device includes: (1) providing a film of a semimetal in a first topological phase; and (2) inducing interlayer shear oscillation of the semimetal within the film, wherein the interlayer shear oscillation induces the semimetal to transition to a different, second topological phase.
- Research Organization:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76SF00515
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
- Patent Number(s):
- 10,861,995
- Application Number:
- 16/559,331
- OSTI ID:
- 1771718
- Country of Publication:
- United States
- Language:
- English
Direct Observation at Room Temperature of the Orthorhombic Weyl Semimetal Phase in Thin Epitaxial MoTe 2
|
journal | June 2018 |
Phase patterning for ohmic homojunction contact in MoTe2
|
journal | August 2015 |
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