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Fast topological switch using strained Weyl semimetals

Patent ·
OSTI ID:1771718
A method of operating a device includes: (1) providing a film of a semimetal in a first topological phase; and (2) inducing interlayer shear oscillation of the semimetal within the film, wherein the interlayer shear oscillation induces the semimetal to transition to a different, second topological phase.
Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
Patent Number(s):
10,861,995
Application Number:
16/559,331
OSTI ID:
1771718
Country of Publication:
United States
Language:
English

References (2)

Direct Observation at Room Temperature of the Orthorhombic Weyl Semimetal Phase in Thin Epitaxial MoTe 2 journal June 2018
Phase patterning for ohmic homojunction contact in MoTe2 journal August 2015

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