Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices
Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.
- Research Organization:
- Univ. of Houston, TX (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0005806
- Assignee:
- University of Houston System (Houston, TX); Massachusetts Institute of Technology (Cambridge, MA)
- Patent Number(s):
- 10,818,832
- Application Number:
- 15/627,593
- OSTI ID:
- 1771566
- Resource Relation:
- Patent File Date: 06/20/2017
- Country of Publication:
- United States
- Language:
- English
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