skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

Abstract

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.

Inventors:
; ;
Publication Date:
Research Org.:
Univ. of Houston, TX (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1771566
Patent Number(s):
10,818,832
Application Number:
15/627,593
Assignee:
University of Houston System (Houston, TX); Massachusetts Institute of Technology (Cambridge, MA)
DOE Contract Number:  
EE0005806
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/20/2017
Country of Publication:
United States
Language:
English

Citation Formats

Jie, Qing, Ren, Zhifeng, and Chen, Gang. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices. United States: N. p., 2020. Web.
Jie, Qing, Ren, Zhifeng, & Chen, Gang. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices. United States.
Jie, Qing, Ren, Zhifeng, and Chen, Gang. 2020. "Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices". United States. https://www.osti.gov/servlets/purl/1771566.
@article{osti_1771566,
title = {Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices},
author = {Jie, Qing and Ren, Zhifeng and Chen, Gang},
abstractNote = {Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.},
doi = {},
url = {https://www.osti.gov/biblio/1771566}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {10}
}

Works referenced in this record:

Thermoelectric materials with filled skutterudite structure for thermoelectric devices
patent, May 2000