Interfaces in Halide Perovskites: Passivating Defects and Probing Grain Structure
- University of Washington
In this talk we describe the role of interfaces, surface defects, and strain on non-radiative recombination losses in hybrid perovskite semiconductors. Using combinations of scanning-probe, electron backscatter diffraction (EBSD), and time-resolved photoluminescence microscopy and spectroscopy, we explore the microscopic origins of non-radiative recombination in both archetypal methylammonium lead tri-iodide (MAPI), and more advanced mixed-cation perovskites. Using EBSD, we image local grain orientation and strain, and correlate surface strain with increased non-radiative recombination in MAPI. We explore the interface between the perovskite and various common charge extraction layers, combining experiment and simulation to show that surface recombination at the charge extraction layers is a limitation in current perovskite solar cell architectures. Finally, we explore alternative passivation and extraction layers to propose ways to more routinely approach the theoretical voltage limits in perovskite photovoltaic using scalable process chemistry.
- Research Organization:
- Univ. of Washington, Seattle, WA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- EE0008747
- OSTI ID:
- 1771116
- Report Number(s):
- DOE-UW-0008747-CONF1
- Resource Relation:
- Conference: Symposium EN09: Advances in the Fundamental Science of Halide Perovskite Optoelectronics; Session: EN09.02.01, Conference: Materials Research Society, Fall Meeting 2019, Boston, MA, 12/02/2019
- Country of Publication:
- United States
- Language:
- English
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