Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si
Abstract
High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (E t ) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.
- Authors:
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1770932
- Report Number(s):
- NREL/CP-5900-79472
MainId:33698;UUID:cff2438a-15ed-422c-9bb9-75368cc7241e;MainAdminID:19978
- DOE Contract Number:
- DE-AC36-08GO28308
- Resource Type:
- Conference
- Resource Relation:
- Conference: Presented at the 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 15 June - 21 August 2020, Calgary, Canada
- Country of Publication:
- United States
- Language:
- English
- Subject:
- SOLAR ENERGY; bulk lifetime; defect characterization; Tabula Rasa; thermally induced degradation; DPCM
Citation Formats
Ochoa, Jorge, LaSalvia, Vincenzo, Stradins, Paul, and Bertoni, Mariana I. Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si. United States: N. p., 2021.
Web. doi:10.1109/PVSC45281.2020.9300530.
Ochoa, Jorge, LaSalvia, Vincenzo, Stradins, Paul, & Bertoni, Mariana I. Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si. United States. https://doi.org/10.1109/PVSC45281.2020.9300530
Ochoa, Jorge, LaSalvia, Vincenzo, Stradins, Paul, and Bertoni, Mariana I. 2021.
"Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si". United States. https://doi.org/10.1109/PVSC45281.2020.9300530.
@article{osti_1770932,
title = {Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si},
author = {Ochoa, Jorge and LaSalvia, Vincenzo and Stradins, Paul and Bertoni, Mariana I.},
abstractNote = {High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (E t ) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.},
doi = {10.1109/PVSC45281.2020.9300530},
url = {https://www.osti.gov/biblio/1770932},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 05 00:00:00 EST 2021},
month = {Tue Jan 05 00:00:00 EST 2021}
}
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