Self-assembled nanocolumns in Bi2Se3 grown by molecular beam epitaxy

Ginley, Theresa P.; Law, Stephanie

doi:10.1116/6.0000831

Title: Self-assembled nanocolumns in Bi₂Se₃ grown by molecular beam epitaxy

Journal Article · Tue Mar 09 00:00:00 EST 2021 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/6.0000831· OSTI ID:1769592

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Univ. of Delaware, Newark, DE (United States); National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Univ. of Delaware, Newark, DE (United States)

Layered van der Waals (vdW) materials grown by physical vapor deposition techniques are generally assumed to have a weak interaction with the substrate during growth. This leads to films with relatively small domains that are usually triangular and a terraced morphology. In this paper, we demonstrate that Bi₂Se₃, a prototypical vdW material, will form a nano-column morphology when grown on GaAs(001) substrates. This morphology is explained by a relatively strong film/substrate interaction, long adatom diffusion lengths, and a high reactive selenium flux. In conclusion, this discovery paves the way toward growth of self-assembled vdW structures even in the absence of strain.

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Research Organization:: Univ. of Delaware, Newark, DE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation Major Research Instrumentation

Grant/Contract Number:: SC0017801; 1828141

OSTI ID:: 1769592

Alternate ID(s):: OSTI ID: 1769986

Journal Information:: Journal of Vacuum Science and Technology A, Vol. 39, Issue 3; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Self-assembled nanocolumns in Bi2Se3 grown by molecular beam epitaxy

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Title: Self-assembled nanocolumns in Bi₂Se₃ grown by molecular beam epitaxy