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Title: Synthesis of Atomically Thin Hexagonal Diamond with Compression

Journal Article · · Nano Letters
ORCiD logo [1];  [2]; ORCiD logo [3]; ORCiD logo [4];  [5]; ORCiD logo [5]; ORCiD logo [6];  [2];  [7]; ORCiD logo [4];  [8]; ORCiD logo [9];  [2]
  1. Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  2. Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
  3. Univ. of California, Berkeley, CA (United States); Beijing Inst. of Technology (China)
  4. Univ. of Saskatchewan, Saskatoon, SK (Canada)
  5. Stanford Univ., CA (United States)
  6. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  7. Univ. of Illinois, Chicago, IL (United States)
  8. Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  9. Univ. of California, Berkeley, CA (United States)

Atomically thin diamond (called diamane, one allotrope of graphene) has attracted considerable scientific interest because of its predicted physical and mechanical properties1-11. However, the successful synthesis of free-standing, pristine diamane has up until now been elusive. Here, we demonstrate the realization of a diamane film through the diamondization of mechanically exfoliated few-layer graphene via compression. Electrical transport, absorption, and x-ray diffraction measurements, along with theoretical calculations reveal that hexagonal diamane (h-diamane) with a bandgap of 2.8 ± 0.3 eV forms by compressing trilayer and thicker graphene to above 20 GPa at room temperature and can be preserved upon decompression to a few GPa. Raman and TEM studies indicate that the few-layer graphene sample after high pressure and thermal treatment also has the h-diamane structure, i.e., h-diamane can be recovered back to ambient conditions. Here, compared to gapless graphene, diamane with sizable bandgap offers exciting possibilities for carbon-based electronic devices.

Research Organization:
Univ. of Illinois, Chicago, IL (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP); National Science Foundation (NSF); National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
Grant/Contract Number:
NA0003975; DMR-1708448; 51527801; U1530402; AC02-76SF00515; AC02-05CH11231
OSTI ID:
1763434
Journal Information:
Nano Letters, Vol. 20, Issue 8; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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