Synthesis of Atomically Thin Hexagonal Diamond with Compression
- Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
- Univ. of California, Berkeley, CA (United States); Beijing Inst. of Technology (China)
- Univ. of Saskatchewan, Saskatoon, SK (Canada)
- Stanford Univ., CA (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Univ. of Illinois, Chicago, IL (United States)
- Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Univ. of California, Berkeley, CA (United States)
Atomically thin diamond (called diamane, one allotrope of graphene) has attracted considerable scientific interest because of its predicted physical and mechanical properties1-11. However, the successful synthesis of free-standing, pristine diamane has up until now been elusive. Here, we demonstrate the realization of a diamane film through the diamondization of mechanically exfoliated few-layer graphene via compression. Electrical transport, absorption, and x-ray diffraction measurements, along with theoretical calculations reveal that hexagonal diamane (h-diamane) with a bandgap of 2.8 ± 0.3 eV forms by compressing trilayer and thicker graphene to above 20 GPa at room temperature and can be preserved upon decompression to a few GPa. Raman and TEM studies indicate that the few-layer graphene sample after high pressure and thermal treatment also has the h-diamane structure, i.e., h-diamane can be recovered back to ambient conditions. Here, compared to gapless graphene, diamane with sizable bandgap offers exciting possibilities for carbon-based electronic devices.
- Research Organization:
- Univ. of Illinois, Chicago, IL (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP); National Science Foundation (NSF); National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- Grant/Contract Number:
- NA0003975; DMR-1708448; 51527801; U1530402; AC02-76SF00515; AC02-05CH11231
- OSTI ID:
- 1763434
- Journal Information:
- Nano Letters, Vol. 20, Issue 8; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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