Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors

Barbosa, Martin Schwellberger; Balke Wisinger, Nina; Tsai, Wan-Yu; Santato, Clara; Orlandi, Marcelo O.

doi:10.1021/acs.jpclett.0c00651

Title: Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors

Journal Article · Wed Apr 01 00:00:00 EDT 2020 · Journal of Physical Chemistry Letters

DOI:https://doi.org/10.1021/acs.jpclett.0c00651· OSTI ID:1735456

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São Paulo State Univ. (Brazil); Polytechnique Montréal, PQ (Canada)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Polytechnique Montréal, PQ (Canada)
São Paulo State Univ. (Brazil)

The structure of electrical double layers at electrified interfaces is of utmost importance for electrochemical energy storage as well as printable, flexible, and bioelectronic devices, such as ion-gated transistors (IGTs). Here we report a study based on atomic force microscopy force–distance profiling on electrical double layers forming at the interface between the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide and sol–gel films of mesoporous tungsten oxide. Here, we successfully followed, under in operando conditions, the evolution of the arrangement of the ions at the interface with the tungsten oxide films used as channel materials in IGTs. Our work sheds light on the mechanism of operation of IGTs, thus offering the possibility of optimizing their performance.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); São Paulo Research Foundation (FAPESP)

Grant/Contract Number:: AC05-00OR22725; 2014/27079-9; 2015/50526-4; 2016/09033-7

OSTI ID:: 1735456

Journal Information:: Journal of Physical Chemistry Letters, Vol. 11, Issue 9; ISSN 1948-7185

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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