Optically clear photo-polymerization resists for additive manufacturing of radiopaque parts
According to one embodiment, a method includes contacting a triiodobenzoic acid with an oxalyl chloride in a solvent whereby triiodobenzoyl chloride is formed, contacting diethanolamine with triiodobenzoyl chloride where triiodobenzoic diol amine is formed, and forming an acrylate of triiodobenzoic diol amine with acryloyl chloride where an organoiodine compound is formed. According to another embodiment, an optically clear photopolymer resist blend for additive manufacturing includes a radiopaque pre-polymer compound where the compound includes at least one of the following: iodine, bromine, tin, lead, or bismuth. The resist blend also includes a photoinitiator, a polymerization inhibitor, and a base pre-polymer.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-07NA27344
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Number(s):
- 10,781,315
- Application Number:
- 15/367,069
- OSTI ID:
- 1735288
- Resource Relation:
- Patent File Date: 12/01/2016
- Country of Publication:
- United States
- Language:
- English
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